Datasheet > APTGL475U120D4G-Module

APTGL475U120D4G-Module

更新时间： 2024-11-21 14:55:59

品牌	Logo	应用领域
美国微芯 - MICROCHIP		双极性晶体管
页数	文件大小	规格书
6页	634K
描述
IGBT 4 Very Low voltage dropLow tail currentLow leakage currentKelvin emitter for easy driveLow st

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中文翻译

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数据手册

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APTGL475U120D4G-Module 数据手册

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APTGL475U120D4G

Single switch

Trench + Field Stop IGBT4

Power Module

V_CES= 1200V

I_C= 475A @ Tc = 80°C

Application



Welding converters

Switched Mode Power Supplies

Uninterruptible Power Supplies

Motor control

Features



Trench + Field Stop IGBT 4 Technology

Low voltage drop

Low leakage current

Low switching losses

Soft recovery parallel diodes

Low diode VF

RBSOA and SCSOA rated



Kelvin emitter for easy drive

M6 connectors for power

M4 connectors for signal

High level of integration

Benefits



Stable temperature behavior

Very rugged

Direct mounting to heatsink (isolated package)

Low junction to case thermal resistance

Easy paralleling due to positive T_Cof V_CEsat

RoHS Compliant

Absolute maximum ratings

Symbol

Parameter

Max ratings

Unit

V_CES

Collector - Emitter Breakdown Voltage

1200

610

475

1200

±20

2082

T_C= 25°C

T_C= 80°C

T_C= 25°C

I_C

Continuous Collector Current

I_CM

V_GE

P_D

Pulsed Collector Current

Gate – Emitter Voltage

Maximum Power Dissipation

T_C= 25°C

T_j= 125°C

RBSOA Reverse Bias Safe Operating Area

800A@1150V

These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.

See application note APT0502 on www.microsemi.com

1 - 6

www.microsemi.com

12 3 4 5 6

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