Datasheet > APTGL240TL120G-Module

APTGL240TL120G-Module

更新时间： 2024-11-21 14:55:59

品牌	Logo	应用领域
美国微芯 - MICROCHIP		双极性晶体管
页数	文件大小	规格书
8页	474K
描述
IGBT 4 Very Low voltage dropLow tail currentLow leakage currentKelvin emitter for easy driveLow st

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APTGL240TL120G-Module 数据手册

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APTGL240TL120G

Three level inverter

Trench + Field Stop IGBT4

Power Module

V_CES= 1200V

I_C= 240A @ Tc = 80°C

VBUS

Application

•

Solar converter

Uninterruptible Power Supplies

CR1

Features

•

Trench + Field Stop IGBT 4 Technology

Low voltage drop

CR5

CR2

Low leakage current

Low switching losses

Soft recovery parallel diodes

Low diode VF

NEUTRAL

OUT

RBSOA and SCSOA rated

CR3

CR6

•

Kelvin emitter for easy drive

Very low stray inductance

Symmetrical design

M5 power connectors

•

High level of integration

CR4

Benefits

•

Stable temperature behavior

Very rugged

Direct mounting to heatsink (isolated package)

Low junction to case thermal resistance

Easy paralleling due to positive TC of VCEsat

Low profile

0/VBUS

VBUS

0/VBUS

RoHS Compliant

NEUTRAL

OUT

Q1 to Q4 Absolute maximum ratings

Symbol

Parameter

Max ratings

Unit

V_CES

Collector - Emitter Breakdown Voltage

1200

305

240

400

±20

1000

T_c= 25°C

T_c= 80°C

T_c= 25°C

I_C

Continuous Collector Current

I_CM

V_GE

P_D

Pulsed Collector Current

Gate – Emitter Voltage

Maximum Power Dissipation

T_c= 25°C

RBSOA Reverse Bias Safe Operating Area

T_j= 150°C 400A @ 1150V

These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note

APT0502 on www.microsemi.com

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