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APTGL120TA120TPG-Module PDF预览

APTGL120TA120TPG-Module

更新时间: 2024-11-22 14:53:51
品牌 Logo 应用领域
美国微芯 - MICROCHIP 双极性晶体管
页数 文件大小 规格书
6页 552K
描述
IGBT 4 Very Low voltage dropLow tail currentLow leakage currentKelvin emitter for easy driveLow st

APTGL120TA120TPG-Module 数据手册

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APTGL120TA120TPG  
Triple phase leg  
Trench + Field Stop IGBT4  
Power module  
VCES = 1200V  
IC = 120A @ Tc = 80°C  
VBUS1  
VBUS2  
VBUS3  
Application  
NTC1  
Welding converters  
G1  
E1  
G3  
E3  
G5  
E5  
Switched Mode Power Supplies  
Uninterruptible Power Supplies  
Motor control  
U
V
W
R1  
G2  
E2  
G4  
E4  
G6  
E6  
Features  
Trench + Field Stop IGBT 4 Technology  
-
-
-
-
-
-
-
-
Low voltage drop  
NTC2  
Low leakage current  
Low switching losses  
Soft recovery parallel diodes  
Low diode VF  
Low leakage current  
RBSOA and SCSOA rated  
Symmetrical design  
0/VBUS1  
0/VBUS2  
0/VBUS3  
Kelvin emitter for easy drive  
Very low stray inductance  
-
-
Symmetrical design  
Lead frames for power connections  
High level of integration  
Internal thermistor for temperature monitoring  
Benefits  
Outstanding performance at high frequency  
operation  
Direct mounting to heatsink (isolated package)  
Low junction to case thermal resistance  
Solderable terminals both for power and signal for  
easy PCB mounting  
Low profile  
RoHS Compliant  
Absolute maximum ratings  
Symbol  
Parameter  
Max ratings  
Unit  
VCES  
Collector - Emitter Breakdown Voltage  
1200  
V
Tc = 25°C  
Tc = 80°C  
Tc = 25°C  
140  
120  
200  
±20  
517  
IC  
Continuous Collector Current  
A
ICM  
VGE  
PD  
Pulsed Collector Current  
Gate – Emitter Voltage  
Maximum Power Dissipation  
V
W
Tc = 25°C  
RBSOA Reverse Bias Safe Operating Area  
Tj = 150°C  
200A @ 1150V  
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note  
APT0502 on www.microsemi.com  
1 - 6  
www.microsemi.com  

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