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APTGF90SK60TG PDF预览

APTGF90SK60TG

更新时间: 2024-11-21 04:32:51
品牌 Logo 应用领域
ADPOW 晶体晶体管功率控制双极性晶体管局域网
页数 文件大小 规格书
6页 310K
描述
Buck chopper NPT IGBT Power Module

APTGF90SK60TG 技术参数

是否Rohs认证: 符合生命周期:Transferred
包装说明:FLANGE MOUNT, R-PUFM-X12Reach Compliance Code:unknown
风险等级:5.66Is Samacsys:N
外壳连接:ISOLATED最大集电极电流 (IC):110 A
集电极-发射极最大电压:600 V配置:SINGLE WITH BUILT-IN DIODE AND THERMISTOR
JESD-30 代码:R-PUFM-X12元件数量:1
端子数量:12封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
认证状态:Not Qualified表面贴装:NO
端子形式:UNSPECIFIED端子位置:UPPER
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:POWER CONTROL
晶体管元件材料:SILICON标称断开时间 (toff):210 ns
标称接通时间 (ton):51 nsBase Number Matches:1

APTGF90SK60TG 数据手册

 浏览型号APTGF90SK60TG的Datasheet PDF文件第2页浏览型号APTGF90SK60TG的Datasheet PDF文件第3页浏览型号APTGF90SK60TG的Datasheet PDF文件第4页浏览型号APTGF90SK60TG的Datasheet PDF文件第5页浏览型号APTGF90SK60TG的Datasheet PDF文件第6页 
APTGF90SK60TG  
VCES = 600V  
Buck chopper  
IC = 90A @ Tc = 80°C  
NPT IGBT Power Module  
Application  
AC and DC motor control  
VBUS  
NTC2  
Switched Mode Power Supplies  
Q1  
Features  
G1  
E1  
Non Punch Through (NPT) THUNDERBOLT IGBT®  
-
-
-
-
-
-
-
-
Low voltage drop  
Low tail current  
Switching frequency up to 100 kHz  
Soft recovery parallel diodes  
Low diode VF  
OUT  
Low leakage current  
Avalanche energy rated  
RBSOA and SCSOA rated  
0/VBUS SENSE  
Kelvin emitter for easy drive  
Very low stray inductance  
-
-
Symmetrical design  
0/VBUS  
NTC1  
Lead frames for power connections  
Internal thermistor for temperature monitoring  
High level of integration  
Benefits  
Outstanding performance at high frequency  
operation  
0/VBUS  
Stable temperature behavior  
Very rugged  
OUT  
SENSE  
Direct mounting to heatsink (isolated package)  
Low junction to case thermal resistance  
Solderable terminals both for power and signal for  
easy PCB mounting  
Easy paralleling due to positive TC of VCEsat  
Low profile  
RoHS compliant  
OUT  
VBUS  
0/VBUS  
E1  
G1  
NTC2  
NTC1  
0/VBUS  
SENSE  
Absolute maximum ratings  
Symbol  
Parameter  
Max ratings  
Unit  
VCES  
Collector - Emitter Breakdown Voltage  
600  
110  
90  
315  
±20  
416  
V
Tc = 25°C  
Tc = 80°C  
Tc = 25°C  
IC  
Continuous Collector Current  
A
ICM  
VGE  
PD  
Pulsed Collector Current  
Gate – Emitter Voltage  
Maximum Power Dissipation  
V
W
Tc = 25°C  
RBSOA Reverse Bias Safe Operating Area  
Tj = 150°C  
315A @ 600V  
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.  
1 - 6  
APT website – http://www.advancedpower.com  

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