是否Rohs认证: | 符合 | 生命周期: | Transferred |
包装说明: | FLANGE MOUNT, R-PUFM-X12 | Reach Compliance Code: | unknown |
风险等级: | 5.66 | Is Samacsys: | N |
外壳连接: | ISOLATED | 最大集电极电流 (IC): | 110 A |
集电极-发射极最大电压: | 600 V | 配置: | SINGLE WITH BUILT-IN DIODE AND THERMISTOR |
JESD-30 代码: | R-PUFM-X12 | 元件数量: | 1 |
端子数量: | 12 | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | FLANGE MOUNT |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | N-CHANNEL |
认证状态: | Not Qualified | 表面贴装: | NO |
端子形式: | UNSPECIFIED | 端子位置: | UPPER |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管应用: | POWER CONTROL |
晶体管元件材料: | SILICON | 标称断开时间 (toff): | 210 ns |
标称接通时间 (ton): | 51 ns | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
APTGF90TA60P | ADPOW |
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Triple phase leg NPT IGBT Power Module | |
APTGF90TA60PG | MICROSEMI |
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Triple phase leg NPT IGBT Power Module | |
APTGF90TDU60P | ADPOW |
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Triple dual Common Source NPT IGBT Power Module | |
APTGF90TDU60PG | MICROSEMI |
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Triple dual Common Source NPT IGBT Power Module | |
APTGF90VDA60T3G | MICROSEMI |
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Dual Boost chopper NPT IGBT Power Module | |
APTGF90X60E3 | MICROSEMI |
获取价格 |
Insulated Gate Bipolar Transistor, 130A I(C), 600V V(BR)CES, N-Channel, MODULE-33 | |
APTGF90X60E3 | ADPOW |
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3 Phase bridge NPT IGBT Power Module | |
APTGF90X60E3G | MICROSEMI |
获取价格 |
Insulated Gate Bipolar Transistor, 130A I(C), 600V V(BR)CES, N-Channel, MODULE-33 | |
APTGF90X60TE3 | ADPOW |
获取价格 |
3 Phase bridge NPT IGBT Power Module | |
APTGF90X60TE3 | MICROSEMI |
获取价格 |
Insulated Gate Bipolar Transistor, 130A I(C), 600V V(BR)CES, N-Channel, MODULE-35 |