Datasheet > AP3C017AY

AP3C017AY

更新时间： 2024-11-19 17:15:27

品牌	Logo	应用领域
富鼎先进 - A-POWER		/
页数	文件大小	规格书
10页	269K
描述
2928-8

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AP3C017AY 数据手册

AP3C017AY

Halogen-Free Product

Advanced Power

Electronics Corp.

N AND P-CHANNEL ENHANCEMENT

MODE POWER MOSFET

▼ Simple Drive Requirement

N-CH BV_DSS

30V

17.8mΩ

▼ Low Gate Charge

R_DS(ON)

▼ Fast Switching Performance

▼ RoHS Compliant & Halogen-Free

I_D

P-CH BV_DSS

R_DS(ON)

-30V

2928-8

30mΩ

-5.5A

Description

I_D

AP3C017A series are from Advanced Power innovated design

and silicon process technology to achieve the lowest possible

on-resistance and fast switching performance. It provides the

designer with an extreme efficient device for use in a wide

range of power applications.

The 2928-8 J-lead package provides good on-resistance

performance and space saving like TSOP-6.

Absolute Maximum Ratings@T_j=25^oC(unless otherwise specified)

Symbol

Parameter

Rating

Units

N-channel

P-channel

-30

V_DS

V_GS

Drain-Source Voltage

+20

Gate-Source Voltage

+20

Drain Current, V_GS@ 10V³

I_D@T_A=25℃

I_D@T_A=70℃

I_DM

-5.5

5.5

-4.5

Pulsed Drain Current¹

-20

P_D@T_A=25℃

T_STG

Total Power Dissipation

1.38

℃

Storage Temperature Range

Operating Junction Temperature Range

-55 to 150

T_J

Thermal Data

Symbol

Parameter

Value

Unit

Rthj-a

Maximum Thermal Resistance, Junction-ambient³

℃/W

201911221

12 3 4 5 6 7...10

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