Datasheet > AP3N028EY

AP3N028EY

更新时间： 2024-11-21 17:15:19

品牌	Logo	应用领域
富鼎先进 - A-POWER		/
页数	文件大小	规格书
6页	71K
描述
SOT-26

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中文翻译

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数据手册

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AP3N028EY 数据手册

AP3N028EY

Halogen-Free Product

Advanced Power

Electronics Corp.

N-CHANNEL ENHANCEMENT MODE

POWER MOSFET

▼ Simple Drive Requirement

BV_DSS

R_DS(ON)

I_D

30V

28mΩ

▼ Lower Gate Charge

▼ Fast Switching Performance

▼ RoHS Compliant & Halogen-Free

SOT-26

Description

AP3N028E series are from Advanced Power innovated design and silicon

process technology to achieve the lowest possible on-resistance and fast

switching performance. It provides the designer with an extreme efficient

device for use in a wide range of power applications.

The SOT-26 package is widely used for all commercial-industrial

applications.

Absolute Maximum Ratings@T_j=25^oC(unless otherwise specified)

Symbol

Parameter

Rating

Units

V_DS

V_GS

Drain-Source Voltage

Gate-Source Voltage

+20

Drain Current³, V_GS@ 10V

Pulsed Drain Current¹

I_D@T_A=25℃

I_D@T_A=70℃

I_DM

5.6

P_D@T_A=25℃

T_STG

Total Power Dissipation

℃

Storage Temperature Range

Operating Junction Temperature Range

-55 to 150

T_J

Thermal Data

Symbol

Parameter

Value

62.5

Unit

Rthj-a

Maximum Thermal Resistance, Junction-ambient³

℃/W

201708091

12 3 4 5 6

中文翻译

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