Datasheet > AP3N5R0JV

AP3N5R0JV

更新时间： 2024-12-01 17:15:27

品牌	Logo	应用领域
富鼎先进 - A-POWER		/
页数	文件大小	规格书
6页	108K
描述
TO-251VS

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中文翻译

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AP3N5R0JV 数据手册

AP3N5R0JV

Halogen-Free Product

Advanced Power

Electronics Corp.

N-CHANNEL ENHANCEMENT MODE

POWER MOSFET

▼ 100% R_g& UIS Test

BV_DSS

R_DS(ON)

I_D

30V

5mΩ

62A

▼ Simple Drive Requirement

▼ Fast Switching Characteristic

▼ RoHS Compliant & Halogen-Free

Description

AP436N054R0sesreierisesaraerefrforommAAddvvaanncceeddPPoowweerr iinnnnoovvaatteedd design

and silicon process technology to achieve the lowest possible

on-resistance and fast switching performance. It provides the

designer with an extreme efficient device for use in a wide

range of power applications.

The TO-220 package is widely preferred for all commercial-

iTnhdeustTriaOl-25th1rSougshhortholeadapppalickaatigoens.is Thperefelrorewd tfhoerrmaall

rceosmismtaenrcceiala-indulsotwriaplatchkroauggehc-hoosltecoanptprilbicuatteiontos thweithwoourtldlweaidde-

pcuotpteudla.r package.

TO-251VS(JV)

Absolute Maximum Ratings@T_j=25^oC(unless otherwise specified)

Symbol

Parameter

Rating

Units

V_DS

V_GS

Drain-Source Voltage

Gate-Source Voltage

+20

Drain Current, V_GS@ 10V

Pulsed Drain Current¹

I_D@T_C=25℃

I_D@T_C=100℃

I_DM

39.2

240

P_D@T_C=25℃

P_D@T_A=25℃

E_AS

Total Power Dissipation

31.25

1.13

℃

Total Power Dissipation

Single Pulse Avalanche Energy³

Storage Temperature Range

Operating Junction Temperature Range

61.2

T_STG

-55 to 150

T_J

Thermal Data

Symbol

Parameter

Value

Units

℃/W

Rthj-c

Maximum Thermal Resistance, Junction-case

Maximum Thermal Resistance, Junction-ambient

Rthj-a

110

202211251

12 3 4 5 6

中文翻译

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