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AP3N4R0S PDF预览

AP3N4R0S

更新时间: 2024-11-18 17:15:39
品牌 Logo 应用领域
富鼎先进 - A-POWER /
页数 文件大小 规格书
6页 110K
描述
TO-263

AP3N4R0S 数据手册

 浏览型号AP3N4R0S的Datasheet PDF文件第2页浏览型号AP3N4R0S的Datasheet PDF文件第3页浏览型号AP3N4R0S的Datasheet PDF文件第4页浏览型号AP3N4R0S的Datasheet PDF文件第5页浏览型号AP3N4R0S的Datasheet PDF文件第6页 
AP3N4R0S  
Halogen-Free Product  
Advanced Power  
Electronics Corp.  
N-CHANNEL ENHANCEMENT MODE  
POWER MOSFET  
D
S
100% Rg & UIS Test  
BVDSS  
30V  
Simple Drive Requirement  
RDS(ON)  
4mΩ  
Fast Switching Characteristic  
G
RoHS Compliant & Halogen-Free  
Description  
AP3N4R0seriesarefromAdvancedPower innovated design  
and silicon process technology to achieve the lowest possible  
on-resistance and fast switching performance. It provides the  
designer with an extreme efficient device for use in a wide  
range of power applications.  
G
D
S
TO-263(S)  
TheTO-263packageiswidelypreferred forallcommercial-
industrialsurfacemountapplicationsusinginfraredreflow
techniqueandsuited for high current application due to the  
low connection resistance.  
Absolute Maximum Ratings@Tj=25oC(unless otherwise specified)  
.
Symbol  
Parameter  
Rating  
Units  
V
VDS  
VGS  
Drain-Source Voltage  
30  
Gate-Source Voltage  
+20  
V
Drain Current, VGS @ 10V4(Silicon Limited)  
Drain Current, VGS @ 10V4  
Drain Current, VGS @ 10V  
ID@TC=25  
ID@TC=25℃  
ID@TC=100℃  
IDM  
89  
A
80  
A
56  
A
Pulsed Drain Current1  
300  
A
PD@TC=25℃  
PD@TA=25℃  
EAS  
Total Power Dissipation  
Total Power Dissipation5  
Single Pulse Avalanche Energy3  
Storage Temperature Range  
Operating Junction Temperature Range  
52  
W
W
mJ  
3.12  
45  
TSTG  
-55 to 150  
-55 to 150  
TJ  
Thermal Data  
Symbol  
Parameter  
Value  
Units  
/W  
/W  
Rthj-c  
Maximum Thermal Resistance, Junction-case  
Maximum Thermal Resistance, Junction-ambient (PCB mount)5  
2.4  
40  
Rthj-a  
1
201707311