AP3N4R0S
Halogen-Free Product
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
D
S
▼ 100% Rg & UIS Test
BVDSS
30V
▼ Simple Drive Requirement
RDS(ON)
4mΩ
▼ Fast Switching Characteristic
G
▼ RoHS Compliant & Halogen-Free
Description
AP436N044R0sesreierisesaraerefrforommAAddvvaanncceeddPPoowweerr iinnnnoovvaatteedd design
and silicon process technology to achieve the lowest possible
on-resistance and fast switching performance. It provides the
designer with an extreme efficient device for use in a wide
range of power applications.
G
D
S
TO-263(S)
The TO-220 package is widely preferred for all commercial-
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rinedsuisstatrniaclesaunrfdacloewmpoaucnktagaeppcolicsat tcioonnstribuustinegtointfhrearewdorlrdewfliodwe
pteocphunlaiqrupeacaknadges.uited for high current application due to the
low connection resistance.
Absolute Maximum Ratings@Tj=25oC(unless otherwise specified)
.
Symbol
Parameter
Rating
Units
V
VDS
VGS
Drain-Source Voltage
30
Gate-Source Voltage
+20
V
Drain Current, VGS @ 10V4(Silicon Limited)
Drain Current, VGS @ 10V4
Drain Current, VGS @ 10V
ID@TC=25℃
ID@TC=25℃
ID@TC=100℃
IDM
89
A
80
A
56
A
Pulsed Drain Current1
300
A
PD@TC=25℃
PD@TA=25℃
EAS
Total Power Dissipation
Total Power Dissipation5
Single Pulse Avalanche Energy3
Storage Temperature Range
Operating Junction Temperature Range
52
W
W
mJ
℃
℃
3.12
45
TSTG
-55 to 150
-55 to 150
TJ
Thermal Data
Symbol
Parameter
Value
Units
℃/W
℃/W
Rthj-c
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient (PCB mount)5
2.4
40
Rthj-a
1
201707311