Datasheet > AP3N1R6MT

AP3N1R6MT

更新时间： 2024-06-19 09:35:31

品牌	Logo	应用领域
富鼎先进 - A-POWER		/
页数	文件大小	规格书
6页	71K
描述
PMPAK-5x6

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AP3N1R6MT 数据手册

AP3N1R6MT

Halogen-Free Product

Advanced Power

Electronics Corp.

N-CHANNEL ENHANCEMENT MODE

POWER MOSFET

▼ 100% R_g& UIS Test

BV_DSS

30V

▼ Simple Drive Requirement

▼ Ultra Low On-resistance

R_DS(ON)

1.6mΩ

▼ RoHS Compliant & Halogen-Free

Description

AP3N1R6 series are from Advanced Power innovated design and

silicon process technology to achieve the lowest possible on-

resistance and fast switching performance. It provides the designer

with an extreme efficient device for use in a wide range of power

applications.

PMPAK^®5x6

The PMPAK

5x6 package is special for DC-DC converters

application and the foot print is compatible with SO-8 with backside

heat sink and lower profile.

Absolute Maximum Ratings@T_j=25^oC(unless otherwise specified)

Symbol

Parameter

Rating

Units

V_DS

V_GS

Drain-Source Voltage

Gate-Source Voltage

+20

Drain Current, V_GS@ 10V⁴(Silicon Limited)

Drain Current, V_GS@ 10V⁴(Package Limited)

Drain Current, V_GS@ 10V³

Pulsed Drain Current¹

I_D@T_C=25℃

I_D@T_A=25℃

I_D@T_A=70℃

I_DM

175

100

43.1

34.5

240

P_D@T_C=25℃

P_D@T_A=25℃

E_AS

Total Power Dissipation

Total Power Dissipation³

Single Pulse Avalanche Energy⁵

Storage Temperature Range

Operating Junction Temperature Range

83.3

℃

151

T_STG

-55 to 150

T_J

Thermal Data

Symbol

Parameter

Value

Unit

℃/W

Rthj-c

Maximum Thermal Resistance, Junction-case

Maximum Thermal Resistance, Junction-ambient³

1.5

Rthj-a

201812171

12 3 4 5 6

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