AP3N1R8MT
Halogen-Free Product
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
D
S
▼ 100% Rg & UIS Test
BVDSS
30V
1.89mΩ
165A
▼ Simple Drive Requirement
RDS(ON)
4
▼ Ultra Low On-resistance
ID
G
▼ RoHS Compliant & Halogen-Free
D
D
D
D
Description
AP3N1R8 series are from Advanced Power innovated design and
silicon process technology to achieve the lowest possible on-
resistance and fast switching performance. It provides the designer
with an extreme efficient device for use in a wide range of power
applications.
S
®
S
The PMPAK
5x6 package is special for DC-DC converters
S
application and the foot print is compatible with SO-8 with backside
heat sink and lower profile.
G
Absolute Maximum Ratings@Tj=25oC(unless otherwise specified)
.
Symbol
Parameter
Rating
Units
V
VDS
VGS
Drain-Source Voltage
30
Gate-Source Voltage
+20
V
Drain Current (Chip), VGS @ 10V4
Drain Current, VGS @ 10V3
Drain Current, VGS @ 10V3
Pulsed Drain Current1
ID@TC=25℃
ID@TA=25℃
ID@TA=70℃
IDM
165
A
40.6
A
32.5
A
300
A
PD@TC=25℃
PD@TA=25℃
EAS
Total Power Dissipation
83.3
W
W
mJ
℃
℃
Total Power Dissipation
5
Single Pulse Avalanche Energy5
Storage Temperature Range
Operating Junction Temperature Range
28.8
TSTG
-55 to 150
-55 to 150
TJ
Thermal Data
Symbol
Parameter
Value
Units
℃/W
℃/W
Rthj-c
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient3
1.5
25
Rthj-a
Data & specifications subject to change without notice
1
201603311