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AP3N1R8MT PDF预览

AP3N1R8MT

更新时间: 2024-11-08 17:15:43
品牌 Logo 应用领域
富鼎先进 - A-POWER /
页数 文件大小 规格书
6页 72K
描述
PMPAK-5x6

AP3N1R8MT 数据手册

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AP3N1R8MT  
Halogen-Free Product  
Advanced Power  
Electronics Corp.  
N-CHANNEL ENHANCEMENT MODE  
POWER MOSFET  
D
S
100% Rg & UIS Test  
BVDSS  
30V  
1.89mΩ  
165A  
Simple Drive Requirement  
RDS(ON)  
4
Ultra Low On-resistance  
ID  
G
RoHS Compliant & Halogen-Free  
D
D
D
D
Description  
AP3N1R8 series are from Advanced Power innovated design and  
silicon process technology to achieve the lowest possible on-  
resistance and fast switching performance. It provides the designer  
with an extreme efficient device for use in a wide range of power  
applications.  
S
®
S
The PMPAK  
5x6 package is special for DC-DC converters  
S
application and the foot print is compatible with SO-8 with backside  
heat sink and lower profile.  
G
PMPAK
®
5x6  
Absolute Maximum Ratings@Tj=25oC(unless otherwise specified)  
.
Symbol  
Parameter  
Rating  
Units  
V
VDS  
VGS  
Drain-Source Voltage  
30  
Gate-Source Voltage  
+20  
V
Drain Current (Chip), VGS @ 10V4  
Drain Current, VGS @ 10V3  
Drain Current, VGS @ 10V3  
Pulsed Drain Current1  
ID@TC=25  
ID@TA=25℃  
ID@TA=70℃  
IDM  
165  
A
40.6  
A
32.5  
A
300  
A
PD@TC=25℃  
PD@TA=25℃  
EAS  
Total Power Dissipation  
83.3  
W
W
mJ  
Total Power Dissipation  
5
Single Pulse Avalanche Energy5  
Storage Temperature Range  
Operating Junction Temperature Range  
28.8  
TSTG  
-55 to 150  
-55 to 150  
TJ  
Thermal Data  
Symbol  
Parameter  
Value  
Units  
/W  
/W  
Rthj-c  
Maximum Thermal Resistance, Junction-case  
Maximum Thermal Resistance, Junction-ambient3  
1.5  
25  
Rthj-a  
Data & specifications subject to change without notice  
1
201603311