Datasheet > AP3N4R0J

AP3N4R0J

更新时间： 2024-11-19 17:15:43

品牌	Logo	应用领域
富鼎先进 - A-POWER		/
页数	文件大小	规格书
6页	110K
描述
TO-251

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中文翻译

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数据手册

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AP3N4R0J 数据手册

AP3N4R0J

Halogen-Free Product

Advanced Power

Electronics Corp.

N-CHANNEL ENHANCEMENT MODE

POWER MOSFET

▼ 100% R_g& UIS Test

BV_DSS

30V

▼ Simple Drive Requirement

R_DS(ON)

4mΩ

▼ Fast Switching Characteristic

▼ RoHS Compliant & Halogen-Free

Description

TO-251(J)

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and silicon process technology to achieve the lowest possible

on-resistance and fast switching performance. It provides the

designer with an extreme efficient device for use in a wide

range of power applications.

The TO-220 package is widely preferred for all commercial-

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popular package.

Absolute Maximum Ratings@T_j=25^oC(unless otherwise specified)

Symbol

Parameter

Rating

Units

V_DS

V_GS

Drain-Source Voltage

Gate-Source Voltage

+20

Drain Current, V_GS@ 10V⁴(Silicon Limited)

Drain Current, V_GS@ 10V⁴

Drain Current, V_GS@ 10V

I_D@T_C=25℃

I_D@T_C=100℃

I_DM

Pulsed Drain Current¹

300

P_D@T_C=25℃

P_D@T_A=25℃

E_AS

Total Power Dissipation

℃

Total Power Dissipation

1.13

Single Pulse Avalanche Energy³

Storage Temperature Range

Operating Junction Temperature Range

T_STG

-55 to 150

T_J

Thermal Data

Symbol

Parameter

Value

Units

℃/W

Rthj-c

Maximum Thermal Resistance, Junction-case

Maximum Thermal Resistance, Junction-ambient

2.4

Rthj-a

110

201709061

12 3 4 5 6

中文翻译

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