Datasheet > AP3N9R5AYT

AP3N9R5AYT

更新时间： 2024-11-21 17:15:47

品牌	Logo	应用领域
富鼎先进 - A-POWER		/
页数	文件大小	规格书
6页	70K
描述
PMPAK-3x3

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AP3N9R5AYT 数据手册

AP3N9R5AYT

Halogen-Free Product

Advanced Power

Electronics Corp.

N-CHANNEL ENHANCEMENT MODE

POWER MOSFET

▼ Simple Drive Requirement

BV_DSS

30V

▼ Small Size & Low R_DS(ON)

R_DS(ON)

9.5mΩ

▼ RoHS Compliant & Halogen-Free

Description

AP3N9R5A series are from Advanced Power innovated design and

silicon process technology to achieve the lowest possible on-

resistance and fast switching performance. It provides the designer

with an extreme efficient device for use in a wide range of power

applications.

The PMPAK ^®3 x 3 package is special for voltage conversion

application using standard infrared reflow technique with the

backside heat sink to achieve the good thermal performance.

PMPAK^®3 x 3

Absolute Maximum Ratings@T_j=25^oC(unless otherwise specified)

Symbol

Parameter

Rating

Units

V_DS

V_GS

Drain-Source Voltage

Gate-Source Voltage

+20

Drain Current, V_GS@ 10V

Drain Current, V_GS@ 10V³

Pulsed Drain Current¹

I_D@T_C=25℃

I_D@T_A=25℃

I_D@T_A=70℃

I_DM

38.7

100

P_D@T_A=25℃

E_AS

Total Power Dissipation

3.57

℃

Single Pulse Avalanche Energy⁴

Storage Temperature Range

Operating Junction Temperature Range

16.2

T_STG

-55 to 150

T_J

Thermal Data

Symbol

Parameter

Value

Unit

℃/W

Rthj-c

Maximum Thermal Resistance, Junction-case

Maximum Thermal Resistance, Junction-ambient³

5.5

Rthj-a

202111242

12 3 4 5 6

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