Datasheet > AP3N9R5AM

AP3N9R5AM

更新时间： 2024-09-26 17:15:31

品牌	Logo	应用领域
富鼎先进 - A-POWER		/
页数	文件大小	规格书
6页	71K
描述
SO-8

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中文翻译

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AP3N9R5AM 数据手册

AP3N9R5AM

Halogen-Free Product

Advanced Power

Electronics Corp.

N-CHANNEL ENHANCEMENT MODE

POWER MOSFET

▼ Lower On-resistance

BV_DSS

30V

▼ Simple Drive Requirement

R_DS(ON)

9.5mΩ

12.5A

▼ Fast Switching Characteristic

I_D

▼ RoHS Compliant & Halogen-Free

SO-8

Description

AP3N9R5A series are from Advanced Power innovated design and

silicon process technology to achieve the lowest possible on-resistance

and fast switching performance. It provides the designer with an

extreme efficient device for use in a wide range of power applications.

The SO-8 package is widely preferred for all commercial-industrial

surface mount applications using infrared reflow technique and suited

for voltage conversion or switch applications.

Absolute Maximum Ratings@T_j=25^oC(unless otherwise specified)

Symbol

Parameter

Rating

Units

V_DS

V_GS

Drain-Source Voltage

Gate-Source Voltage

+20

Drain Current, V_GS@ 10V³

Pulsed Drain Current¹

I_D@T_A=25℃

I_D@T_A=70℃

I_DM

12.5

P_D@T_A=25℃

T_STG

Total Power Dissipation

2.5

℃

Storage Temperature Range

Operating Junction Temperature Range

-55 to 150

T_J

Thermal Data

Symbol

Parameter

Value

Unit

Rthj-a

Maximum Thermal Resistance, Junction-ambient³

℃/W

202209271

12 3 4 5 6

中文翻译

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