Datasheet > AP3P011YT

AP3P011YT

更新时间： 2024-12-01 17:15:27

品牌	Logo	应用领域
富鼎先进 - A-POWER		/
页数	文件大小	规格书
5页	64K
描述
PMPAK-3x3

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中文翻译

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AP3P011YT 数据手册

AP3P011YT

Halogen-Free Product

Advanced Power

Electronics Corp.

P-CHANNEL ENHANCEMENT MODE

POWER MOSFET

▼ Low Gate Charge

BV_DSS

R_DS(ON)

I_D

-30V

11mΩ

-14A

▼ Fast Switching Characteristic

▼ Simple Drive Requirement

▼ RoHS Compliant & Halogen-Free

Description

Advanced Power MOSFETs from APEC provide the designer with the

best combination of fast switching, ruggedized device design, low on-

resistance and cost-effectiveness.

The PMPAK^®3x3 package is special for DC-DC converters application

and lower 1.0mm profile with backside heat sink.

PMPAK^®3x3

Absolute Maximum Ratings@T_j=25^oC(unless otherwise specified)

Symbol

Parameter

Rating

Units

V_DS

V_GS

Drain-Source Voltage

-30

Gate-Source Voltage

+25

Drain Current³, V_GS@ 10V

Pulsed Drain Current¹

I_D@T_A=25℃

I_D@T_A=70℃

I_DM

-14

-11

-50

P_D@T_A=25℃

T_STG

Total Power Dissipation

3.12

℃

Storage Temperature Range

Operating Junction Temperature Range

-55 to 150

T_J

Thermal Data

Symbol

Parameter

Value

Unit

℃/W

Rthj-c

Maximum Thermal Resistance, Junction-case

Maximum Thermal Resistance, Junction-ambient³

Rthj-a

201912111

12 3 4 5

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