AP3P020J
Halogen-Free Product
Advanced Power
Electronics Corp.
P-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ 100% UIS Test
BVDSS
RDS(ON)
ID
-30V
20mΩ
-30A
D
S
▼ Simple Drive Requirement
▼ Fast Switching Characteristic
G
▼ RoHS Compliant & Halogen-Free
Description
AP3P020 series are from Advanced Power innovated design and
silicon process technology to achieve the lowest possible on-
resistance and fast switching performance. It provides the designer
with an extreme efficient device for use in a wide range of power
applications.
G
D
S
TO-251(J)
The straight lead version TO-251 package is widely preferred for all
commercial-industrial through hole applications.
Absolute Maximum Ratings@Tj=25oC(unless otherwise specified)
.
Symbol
Parameter
Rating
Units
V
VDS
VGS
Drain-Source Voltage
-30
Gate-Source Voltage
+20
V
Drain Current, VGS @ 10V
Drain Current, VGS @ 10V
Pulsed Drain Current1
ID@TC=25℃
ID@TC=100℃
IDM
-30
A
-18.5
-100
A
A
PD@TC=25℃
PD@TA=25℃
EAS
Total Power Dissipation
25
W
W
mJ
℃
℃
Total Power Dissipation
1.13
Single Pulse Avalanche Energy3
Storage Temperature Range
Operating Junction Temperature Range
28.8
TSTG
-55 to 150
-55 to 150
TJ
Thermal Data
Symbol
Parameter
Value
Units
℃/W
℃/W
Rthj-c
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient
5
Rthj-a
110
1
202004211