Datasheet > AP3P050AH

AP3P050AH

更新时间： 2024-11-20 17:15:43

品牌	Logo	应用领域
富鼎先进 - A-POWER		/
页数	文件大小	规格书
6页	237K
描述
TO-252

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AP3P050AH 数据手册

AP3P050AH

Halogen-Free Product

Advanced Power

Electronics Corp.

P-CHANNEL ENHANCEMENT MODE

POWER MOSFET

▼ Lower Gate Charge

BV_DSS

R_DS(ON)

I_D

-30V

▼ Simple Drive Requirement

50mΩ

-15.6A

▼ Fast Switching Characteristic

▼ RoHS Compliant & Halogen-Free

Description

AP3P050A series are from Advanced Power innovated design and silicon

process technology to achieve the lowest possible on-resistance and fast

switching performance. It provides the designer with an extreme efficient

device for use in a wide range of power applications.

TO-252(H)

The TO-252 package is widely preferred for all commercial-industrial

surface mount applications using infrared reflow technique and suited for

high current application due to the low connection resistance.

Absolute Maximum Ratings@T_j=25^oC(unless otherwise specified)

Symbol

Parameter

Rating

Units

V_DS

V_GS

Drain-Source Voltage

-30

Gate-Source Voltage

+20

Drain Current, V_GS@ 10V

I_D@T_C=25℃

I_D@T_C=100℃

I_DM

-15.6

-9.8

Drain Current, V_GS@ 10V

Pulsed Drain Current¹

-40

P_D@T_C=25℃

P_D@T_A=25℃

E_AS

Total Power Dissipation

Total Power Dissipation³

Single Pulse Avalanche Energy⁴

Storage Temperature Range

Operating Junction Temperature Range

17.8

℃

7.2

T_STG

-55 to 150

T_J

Thermal Data

Symbol

Parameter

Value

Units

℃/W

Rthj-c

Maximum Thermal Resistance, Junction-case

Maximum Thermal Resistance, Junction-ambient (PCB mount)³

Rthj-a

62.5

202007061

12 3 4 5 6

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