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AP3R303GMT-HF PDF预览

AP3R303GMT-HF

更新时间: 2024-02-22 04:38:46
品牌 Logo 应用领域
富鼎先进 - A-POWER 晶体晶体管功率场效应晶体管开关脉冲光电二极管驱动
页数 文件大小 规格书
4页 101K
描述
Simple Drive Requirement SO-8 Compatible with Heatsink

AP3R303GMT-HF 技术参数

是否Rohs认证: 符合生命周期:Contact Manufacturer
包装说明:SMALL OUTLINE, R-PDSO-F8针数:8
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.29.00.95风险等级:5.71
Is Samacsys:N雪崩能效等级(Eas):28.8 mJ
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:30 V
最大漏极电流 (ID):31 A最大漏源导通电阻:0.0033 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-30 代码:R-PDSO-F8
湿度敏感等级:3元件数量:1
端子数量:8工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性/信道类型:N-CHANNEL
最大脉冲漏极电流 (IDM):250 A认证状态:Not Qualified
表面贴装:YES端子形式:FLAT
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

AP3R303GMT-HF 数据手册

 浏览型号AP3R303GMT-HF的Datasheet PDF文件第2页浏览型号AP3R303GMT-HF的Datasheet PDF文件第3页浏览型号AP3R303GMT-HF的Datasheet PDF文件第4页 
AP3R303GMT-HF  
Halogen-Free Product  
Advanced Power  
Electronics Corp.  
N-CHANNEL ENHANCEMENT MODE  
POWER MOSFET  
Simple Drive Requirement  
BVDSS  
RDS(ON)  
ID  
30V  
3.3mΩ  
105A  
D
S
SO-8 Compatible with Heatsink  
Low On-resistance  
RoHS Compliant  
G
D
D
Description  
D
D
Advanced Power MOSFETs from APEC provide the  
designer with the best combination of fast switching,  
ruggedized device design, low on-resistance and cost-effectiveness.  
The PMPAK 5x6 package is special for DC-DC converters application  
and the foot print is compatible with SO-8 with backside heat sink and  
lower profile.  
S
S
S
G
PMPAK 5x6  
Absolute Maximum Ratings  
Symbol  
Parameter  
Rating  
30  
Units  
VDS  
VGS  
Drain-Source Voltage  
V
V
Gate-Source Voltage  
+20  
ID@TC=25  
ID@TA=25℃  
ID@TA=70℃  
IDM  
Continuous Drain Current (Chip)  
Continuous Drain Current3  
Continuous Drain Current3  
Pulsed Drain Current1  
105  
A
31  
A
25  
A
250  
A
PD@TC=25℃  
PD@TA=25℃  
EAS  
Total Power Dissipation  
56.8  
5
W
W
mJ  
Total Power Dissipation  
Single Pulse Avalanche Energy4  
Storage Temperature Range  
Operating Junction Temperature Range  
28.8  
-55 to 150  
-55 to 150  
TSTG  
TJ  
Thermal Data  
Symbol  
Parameter  
Value  
Units  
/W  
/W  
Rthj-c  
Maximum Thermal Resistance, Junction-case  
Maximum Thermal Resistance, Junction-ambient3  
2.2  
25  
Rthj-a  
Data & specifications subject to change without notice  
1
200810171  

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