Datasheet > AP3R303GMT-L

AP3R303GMT-L

更新时间： 2024-11-18 17:15:39

品牌	Logo	应用领域
富鼎先进 - A-POWER		/
页数	文件大小	规格书
5页	107K
描述
PMPAK-5x6L

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AP3R303GMT-L 数据手册

AP3R303GMT-L

Halogen-Free Product

Advanced Power

Electronics Corp.

N-CHANNEL ENHANCEMENT MODE

POWER MOSFET

▼ Simple Drive Requirement

BV_DSS

30V

3.3mΩ

105A

▼ SO-8 Compatible with Heatsink

R_DS(ON)

▼ Low On-resistance

I_D

▼ RoHS Compliant & Halogen-Free

Description

AP3R303 series are from Advanced Power innovated design and silicon

process technology to achieve the lowest possible on-resistance and fast

switching performance. It provides the designer with an extreme efficient

device for use in a wide range of power applications.

The PMPAK^®5x6L ppackage is special for voltage conversion application

using standard infrared reflow technique with the backside heat sink to

achieve the good thermal performance.

PMPAK^®5x6L

Absolute Maximum Ratings@T_j=25^oC(unless otherwise specified)

Symbol

Parameter

Rating

Units

V_DS

V_GS

Drain-Source Voltage

Gate-Source Voltage

+20

Drain Current (Chip), V_GS@ 10V⁵

Drain Current³, V_GS@ 10V

Pulsed Drain Current¹

I_D@T_C=25℃

I_D@T_A=25℃

I_D@T_A=70℃

I_DM

105

250

P_D@T_C=25℃

P_D@T_A=25℃

E_AS

Total Power Dissipation

56.8

℃

Total Power Dissipation

Single Pulse Avalanche Energy⁴

Storage Temperature Range

Operating Junction Temperature Range

28.8

-55 to 150

T_STG

T_J

Thermal Data

Symbol

Parameter

Value

Units

℃/W

Rthj-c

Maximum Thermal Resistance, Junction-case

Maximum Thermal Resistance, Junction-ambient³

2.2

Rthj-a

Data & specifications subject to change without notice

201601261

12 3 4 5

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