Datasheet > AP3P021YT

AP3P021YT

更新时间： 2024-11-19 17:15:47

品牌	Logo	应用领域
富鼎先进 - A-POWER		/
页数	文件大小	规格书
5页	219K
描述
PMPAK-3x3

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AP3P021YT 数据手册

AP3P021YT

Halogen-Free Product

Advanced Power

Electronics Corp.

P-CHANNEL ENHANCEMENT MODE

POWER MOSFET

▼ Low Gate Charge

BV_DSS

-30V

21mΩ

-10A

▼ Fast Switching Characteristic

▼ Simple Drive Requirement

R_DS(ON)

I_D

▼ RoHS Compliant & Halogen-Free

Description

AP3P021 series are from Advanced Power innovated design and

silicon process technology to achieve the lowest possible on-

resistance and fast switching performance. It provides the designer

with an extreme efficient device for use in a wide range of power

applications.

The PMPAK ^®3 x 3 package is special for voltage conversion

application using standard infrared reflow technique with the

backside heat sink to achieve the good thermal performance.

PMPAK^®3x3

Absolute Maximum Ratings@T_j=25^oC(unless otherwise specified)

Symbol

Parameter

Rating

Units

V_DS

V_GS

Drain-Source Voltage

-30

Gate-Source Voltage

+25

Drain Current, V_GS@ 10V³

I_D@T_A=25℃

I_D@T_A=70℃

I_DM

-10

-8

Pulsed Drain Current¹

-40

P_D@T_A=25℃

T_STG

Total Power Dissipation

3.12

℃

Storage Temperature Range

Operating Junction Temperature Range

-55 to 150

T_J

Thermal Data

Symbol

Parameter

Value

Unit

℃/W

Rthj-c

Maximum Thermal Resistance, Junction-case

Maximum Thermal Resistance, Junction-ambient³

Rthj-a

202007171

12 3 4 5

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