Datasheet > AP3P7R0EM

AP3P7R0EM

更新时间： 2024-11-19 17:15:39

品牌	Logo	应用领域
富鼎先进 - A-POWER		/
页数	文件大小	规格书
6页	74K
描述
SO-8

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中文翻译

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数据手册

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AP3P7R0EM 数据手册

AP3P7R0EM

Halogen-Free Product

Advanced Power

Electronics Corp.

P-CHANNEL ENHANCEMENT MODE

POWER MOSFET

▼ 100% R_g& UIS Test

BV_DSS

-30V

7mΩ

-15.5A

2KV

▼ Simple Drive Requirement

▼ Ultra Low On-resistance

R_DS(ON)

I_D

▼ RoHS Compliant & Halogen-Free

HBM ESD

Description

AP3P7R0E series are from Advanced Power innovated design and

silicon process technology to achieve the lowest possible on-resistance

and fast switching performance. It provides the designer with an

extreme efficient device for use in a wide range of power applications.

The SO-8 package is widely preferred for all commercial-industrial

surface mount applications and suited for low voltage applications such

as DC/DC converters.

Absolute Maximum Ratings@T_j=25^oC(unless otherwise specified)

Symbol

Parameter

Rating

Units

V_DS

V_GS

Drain-Source Voltage

-30

Gate-Source Voltage

+25

Drain Current³, V_GS@ 10V

Pulsed Drain Current¹

I_D@T_A=25℃

I_D@T_A=70℃

I_DM

-15.5

-12.4

-50

P_D@T_A=25℃

T_STG

Total Power Dissipation

2.5

℃

Storage Temperature Range

Operating Junction Temperature Range

-55 to 150

T_J

Thermal Data

Symbol

Parameter

Value

Unit

Rthj-a

Maximum Thermal Resistance, Junction-ambient³

℃/W

Data and specifications subject to change without notice

201702233

12 3 4 5 6

中文翻译

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