Datasheet > AP3P7R0EMT

AP3P7R0EMT

更新时间： 2024-05-23 22:23:46

品牌	Logo	应用领域
富鼎先进 - A-POWER		/
页数	文件大小	规格书
6页	72K
描述
PMPAK-5x6

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AP3P7R0EMT 数据手册

AP3P7R0EMT

Halogen-Free Product

Advanced Power

Electronics Corp.

P-CHANNEL ENHANCEMENT MODE

POWER MOSFET

▼ 100% R_g& UIS Test

BV_DSS

R_DS(ON)

I_D

-30V

7mΩ

-75A

2KV

▼ Simple Drive Requirement

▼ Fast Switching Characteristic

▼ RoHS Compliant & Halogen-Free

HBM ESD

Description

AP3P7R0E series are from Advanced Power innovated design and

silicon process technology to achieve the lowest possible on-resistance

and fast switching performance. It provides the designer with an

extreme efficient device for use in a wide range of power applications.

The PMPAK^®5x6 package is special for voltage conversion application

using standard infrared reflow technique with the backside heat sink to

achieve the good thermal performance.

PMPAK^®5x6

Absolute Maximum Ratings@T_j=25^oC(unless otherwise specified)

Symbol

Parameter

Rating

Units

V_DS

V_GS

Drain-Source Voltage

-30

Gate-Source Voltage

+20

Drain Current, V_GS@ 10V

Drain Current³, V_GS@ 10V

Pulsed Drain Current¹

I_D@T_C=25℃

I_D@T_C=100℃

I_D@T_A=25℃

I_D@T_A=70℃

I_DM

-75

-47.8

-22

-17.5

-200

P_D@T_C=25℃

P_D@T_A=25℃

E_AS

Total Power Dissipation

59.5

℃

Total Power Dissipation

Single Pulse Avalanche Energy⁴

Storage Temperature Range

Operating Junction Temperature Range

135

T_STG

-55 to 150

T_J

Thermal Data

Symbol

Parameter

Value

Unit

℃/W

Rthj-c

Maximum Thermal Resistance, Junction-case

Maximum Thermal Resistance, Junction-ambient³

2.1

Rthj-a

Data and specifications subject to change without notice

201704251

12 3 4 5 6

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