AP3P021M
Halogen-Free Product
Advanced Power
Electronics Corp.
P-CHANNEL ENHANCEMENT MODE
POWER MOSFET
D
S
▼ Low Gate Charge
BVDSS
-30V
21mΩ
-9A
▼ Fast Switching Characteristic
▼ Simple Drive Requirement
RDS(ON)
3
ID
G
▼ RoHS Compliant & Halogen-Free
Description
D
D
D
AP3P021 series are from Advanced Power innovated design and silicon
process technology to achieve the lowest possible on-resistance and
fast switching performance. It provides the designer with an extreme
efficient device for use in a wide range of power applications.
D
G
S
S
SO-8
S
The SO-8 package is widely preferred for all commercial-industrial
surface mount applications and suited for low voltage applications such
as DC/DC converters.
Absolute Maximum Ratings@Tj=25oC(unless otherwise specified)
.
Symbol
Parameter
Rating
Units
V
VDS
VGS
Drain-Source Voltage
-30
Gate-Source Voltage
+25
V
Drain Current, VGS @ 10V3
Drain Current, VGS @ 10V3
Pulsed Drain Current1
ID@TA=25℃
ID@TA=70℃
IDM
-9
A
-7.2
A
-40
A
PD@TA=25℃
EAS
Total Power Dissipation3
2.5
W
mJ
℃
℃
Single Pulse Avalanche Energy4
Storage Temperature Range
Operating Junction Temperature Range
16.2
TSTG
-55 to 150
-55 to 150
TJ
Thermal Data
Symbol
Parameter
Value
50
Unit
Rthj-a
Maximum Thermal Resistance, Junction-ambient3
℃/W
1
202006231