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AP3P021M PDF预览

AP3P021M

更新时间: 2024-11-19 17:15:27
品牌 Logo 应用领域
富鼎先进 - A-POWER /
页数 文件大小 规格书
6页 237K
描述
SO-8

AP3P021M 数据手册

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AP3P021M  
Halogen-Free Product  
Advanced Power  
Electronics Corp.  
P-CHANNEL ENHANCEMENT MODE  
POWER MOSFET  
D
S
Low Gate Charge  
BVDSS  
-30V  
21mΩ  
-9A  
Fast Switching Characteristic  
Simple Drive Requirement  
RDS(ON)  
3
ID  
G
RoHS Compliant & Halogen-Free  
Description  
D
D
D
AP3P021 series are from Advanced Power innovated design and silicon  
process technology to achieve the lowest possible on-resistance and  
fast switching performance. It provides the designer with an extreme  
efficient device for use in a wide range of power applications.  
D
G
S
S
SO-8  
S
The SO-8 package is widely preferred for all commercial-industrial  
surface mount applications and suited for low voltage applications such  
as DC/DC converters.  
Absolute Maximum Ratings@Tj=25oC(unless otherwise specified)  
.
Symbol  
Parameter  
Rating  
Units  
V
VDS  
VGS  
Drain-Source Voltage  
-30  
Gate-Source Voltage  
+25  
V
Drain Current, VGS @ 10V3  
Drain Current, VGS @ 10V3  
Pulsed Drain Current1  
ID@TA=25  
ID@TA=70℃  
IDM  
-9  
A
-7.2  
A
-40  
A
PD@TA=25℃  
EAS  
Total Power Dissipation3  
2.5  
W
mJ  
Single Pulse Avalanche Energy4  
Storage Temperature Range  
Operating Junction Temperature Range  
16.2  
TSTG  
-55 to 150  
-55 to 150  
TJ  
Thermal Data  
Symbol  
Parameter  
Value  
50  
Unit  
Rthj-a  
Maximum Thermal Resistance, Junction-ambient3  
/W  
1
202006231