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AP3P010YT PDF预览

AP3P010YT

更新时间: 2024-11-19 17:15:31
品牌 Logo 应用领域
富鼎先进 - A-POWER /
页数 文件大小 规格书
5页 65K
描述
PMPAK-3x3

AP3P010YT 数据手册

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AP3P010YT  
Halogen-Free Product  
Advanced Power  
Electronics Corp.  
P-CHANNEL ENHANCEMENT MODE  
POWER MOSFET  
Low Gate Charge  
BVDSS  
RDS(ON)  
ID  
-30V  
D
S
Fast Switching Characteristic  
Simple Drive Requirement  
10mΩ  
-14.6A  
G
RoHS Compliant & Halogen-Free  
D
D
Description  
D
Advanced Power MOSFETs from APEC provide the designer with the  
best combination of fast switching, ruggedized device design, low on-  
resistance and cost-effectiveness.  
D
The PMPAK® 3x3 package is special for DC-DC converters application  
and lower 1.0mm profile with backside heat sink.  
S
S
S
G
PMPAK® 3x3  
Absolute Maximum Ratings@Tj=25oC(unless otherwise specified)  
.
Symbol  
Parameter  
Rating  
Units  
V
VDS  
VGS  
Drain-Source Voltage  
-30  
Gate-Source Voltage  
+20  
V
Drain Current3, VGS @ 10V  
Drain Current3, VGS @ 10V  
Pulsed Drain Current1  
ID@TA=25  
ID@TA=70℃  
IDM  
-14.6  
A
-11.7  
A
-50  
A
PD@TA=25℃  
TSTG  
Total Power Dissipation  
3.12  
W
Storage Temperature Range  
Operating Junction Temperature Range  
-55 to 150  
-55 to 150  
TJ  
Thermal Data  
Symbol  
Parameter  
Value  
Unit  
/W  
/W  
Rthj-c  
Maximum Thermal Resistance, Junction-case  
Maximum Thermal Resistance, Junction-ambient3  
5
Rthj-a  
40  
1
202207252