AP3P010YT
Halogen-Free Product
Advanced Power
Electronics Corp.
P-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Low Gate Charge
BVDSS
RDS(ON)
ID
-30V
D
S
▼ Fast Switching Characteristic
▼ Simple Drive Requirement
10mΩ
-14.6A
G
▼ RoHS Compliant & Halogen-Free
D
D
Description
D
Advanced Power MOSFETs from APEC provide the designer with the
best combination of fast switching, ruggedized device design, low on-
resistance and cost-effectiveness.
D
The PMPAK® 3x3 package is special for DC-DC converters application
and lower 1.0mm profile with backside heat sink.
S
S
S
G
PMPAK® 3x3
Absolute Maximum Ratings@Tj=25oC(unless otherwise specified)
.
Symbol
Parameter
Rating
Units
V
VDS
VGS
Drain-Source Voltage
-30
Gate-Source Voltage
+20
V
Drain Current3, VGS @ 10V
Drain Current3, VGS @ 10V
Pulsed Drain Current1
ID@TA=25℃
ID@TA=70℃
IDM
-14.6
A
-11.7
A
-50
A
PD@TA=25℃
TSTG
Total Power Dissipation
3.12
W
℃
℃
Storage Temperature Range
Operating Junction Temperature Range
-55 to 150
-55 to 150
TJ
Thermal Data
Symbol
Parameter
Value
Unit
℃/W
℃/W
Rthj-c
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient3
5
Rthj-a
40
1
202207252