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AP3NA2R8CMT PDF预览

AP3NA2R8CMT

更新时间: 2024-11-18 17:15:35
品牌 Logo 应用领域
富鼎先进 - A-POWER /
页数 文件大小 规格书
6页 112K
描述
PMPAK-5x6

AP3NA2R8CMT 数据手册

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AP3NA2R8CMT  
Halogen-Free Product  
Advanced Power  
Electronics Corp.  
N-CHANNEL ENHANCEMENT MODE  
POWER MOSFET  
100% Rg & UIS Test  
BVDSS  
30V  
D
S
Simple Drive Requirement  
Low On-resistance  
RDS(ON)  
2.8mΩ  
G
RoHS Compliant & Halogen-Free  
D
D
D
Description  
D
AP3NA2R8C series are from Advanced Power innovated design  
and silicon process technology to achieve the lowest possible on-  
resistance and fast switching performance. It provides the designer  
with an extreme efficient device for use in a wide range of power  
applications.  
S
S
S
G
®
PMPAK® 5x6  
The PMPAK  
5x6 package is special for DC-DC converters  
application and the foot print is compatible with SO-8 with backside  
heat sink and lower profile.  
Absolute Maximum Ratings@Tj=25oC(unless otherwise specified)  
Symbol  
Parameter  
Drain-Source Voltage  
Gate-Source Voltage  
Rating  
Units  
V
.
VDS  
VGS  
30  
+20  
V
Drain Current, VGS @ 10V6(Silicon Limited)  
Drain Current, VGS @ 10V6(Package Limited)  
Drain Current, VGS @ 10V6(Package Limited)  
Drain Current, VGS @ 10V3  
Drain Current, VGS @ 10V3  
Pulsed Drain Current1  
ID@TC=25  
ID@TC=25℃  
ID@TC=100℃  
ID@TA=25℃  
ID@TA=70℃  
IDM  
113.3  
60  
A
A
60  
A
33.7  
27  
A
A
300  
A
PD@TC=25℃  
PD@TA=25℃  
EAS  
Total Power Dissipation  
Total Power Dissipation3  
Single Pulse Avalanche Energy4  
56.8  
5
W
W
mJ  
31.2  
-55 to 150  
-55 to 150  
TSTG  
Storage Temperature Range  
TJ  
Operating Junction Temperature Range  
Thermal Data  
Symbol  
Parameter  
Value  
Unit  
/W  
/W  
Rthj-c  
Maximum Thermal Resistance, Junction-case  
Maximum Thermal Resistance, Junction-ambient3  
2.2  
25  
Rthj-a  
1
202402221