Datasheet > AP3N1K2EN1

AP3N1K2EN1

更新时间： 2024-11-19 17:15:35

品牌	Logo	应用领域
富鼎先进 - A-POWER		/
页数	文件大小	规格书
5页	67K
描述
SOT-723

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中文翻译

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AP3N1K2EN1 数据手册

AP3N1K2EN1

Halogen-Free Product

Advanced Power

Electronics Corp.

N-CHANNEL ENHANCEMENT MODE

POWER MOSFET

▼ Capable of 1.5V Low Gate Drive

▼ Low Gate Charge

BV_DSS

R_DS(ON)

I_D

30V

1.2Ω

200mA

2KV

▼ Fast Switching Performance

▼ RoHS Compliant & Halogen-Free

HBM ESD

Description

1 : Gate

2 : Drain

3 : Source

AP3N1K2E series are from Advanced Power innovated design

and silicon process technology to achieve the lowest possible

on-resistance and fast switching performance. It provides the

designer with an extreme efficient device for use in a wide

range of power applications.

SOT-723(N1)

The SOT-723 Package with very small footprint is suitable for

all commercial-industrial surface mount application.

Absolute Maximum Ratings@T_j=25^oC(unless otherwise specified)

Symbol

Parameter

Rating

Units

V_DS

V_GS

Drain-Source Voltage

Gate-Source Voltage

+12

Drain Current, V_GS@ 2.5V³

Pulsed Drain Current¹

I_D@T_A=25℃

200

I_DM

400

I_S@T_A=25℃

Source Current (Body Diode)

Pulsed Source Current¹(Body Diode)

Total Power Dissipation

125

I_SM

800

P_D@T_A=25℃

0.15

T_STG

T_J

Storage Temperature Range

Operating Junction Temperature Range

-55 to 150

℃

Thermal Data

Symbol

Parameter

Value

833

Unit

Rthj-a

Maximum Thermal Resistance, Junction-ambient³

℃/W

202203281

12 3 4 5

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