Datasheet > AP3N2R1P

AP3N2R1P

更新时间： 2024-11-21 17:15:51

品牌	Logo	应用领域
富鼎先进 - A-POWER		/
页数	文件大小	规格书
6页	74K
描述
TO-220

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AP3N2R1P 数据手册

AP3N2R1P

Halogen-Free Product

Advanced Power

Electronics Corp.

N-CHANNEL ENHANCEMENT MODE

POWER MOSFET

▼ 100% R_g& UIS Test

BV_DSS

30V

▼ Simple Drive Requirement

R_DS(ON)

2.1mΩ

▼ Fast Switching Characteristic

▼ RoHS Compliant & Halogen-Free

Description

AP436N024R1sesreierisesaraerefrforommAAddvvaanncceeddPPoowweerr iinnnnoovvaatteedd design

and silicon process technology to achieve the lowest possible

on-resistance and fast switching performance. It provides the

designer with an extreme efficient device for use in a wide

range of power applications.

TO-220(P)

The TO-220 package is widely preferred for all commercial-

industrial through hole applications. The low thermal

resistance and low package cost contribute to the worldwide

popular package.

Absolute Maximum Ratings@T_j=25^oC(unless otherwise specified)

Symbol

Parameter

Rating

Units

V_DS

V_GS

Drain-Source Voltage

Gate-Source Voltage

+20

Drain Current, V_GS@ 10V⁴(Silicon Limited)

Drain Current, V_GS@ 10V⁴

Drain Current, V_GS@ 10V

I_D@T_C=25℃

I_D@T_C=100℃

I_DM

183

130

129

Pulsed Drain Current¹

400

P_D@T_C=25℃

P_D@T_A=25℃

E_AS

Total Power Dissipation

125

℃

Total Power Dissipation

2.4

Single Pulse Avalanche Energy³

Storage Temperature Range

Operating Junction Temperature Range

T_STG

-55 to 175

T_J

Thermal Data

Symbol

Parameter

Value

Units

℃/W

Rthj-c

Maximum Thermal Resistance, Junction-case

Maximum Thermal Resistance, Junction-ambient

1.2

Rthj-a

201906181

12 3 4 5 6

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