Datasheet > AP3C017AYT

AP3C017AYT

更新时间： 2024-05-23 22:22:00

品牌	Logo	应用领域
富鼎先进 - A-POWER		/
页数	文件大小	规格书
8页	259K
描述
PMPAK-3x3

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AP3C017AYT 数据手册

AP3C017AYT

Halogen-Free Product

Advanced Power

Electronics Corp.

N AND P-CHANNEL ENHANCEMENT

MODE POWER MOSFET

▼ Simple Drive Requirement

N-CH BV_DSS

R_DS(ON)

30V

17.8mΩ

-30V

▼ Good Thermal Performance

▼ Fast Switching Performance

▼ RoHS Compliant & Halogen-Free

P-CH BV_DSS

R_DS(ON)

PMPAK^®3x3

30mΩ

Description

AP3C017A series are from Advanced Power innovated design and

silicon process technology to achieve the lowest possible on-

resistance and fast switching performance. It provides the designer

with an extreme efficient device for use in a wide range of power

applications.

The PMPAK

3x3 package is special for voltage conversion

application using standard infrared reflow technique with the

backside heat sink to achieve the good thermal performance.

Absolute Maximum Ratings@T_j=25^oC(unless otherwise specified)

Symbol

Parameter

Rating

Units

N-channel

P-channel

-30

V_DS

V_GS

Drain-Source Voltage

Gate-Source Voltage

+20

20.8

+20

I_D@T_C=25℃

I_D@T_C=100℃

I_D@T_A=25℃

I_D@T_A=70℃

I_DM

Drain Current, V_GS@ 10V

Drain Current³, V_GS@ 10V

Pulsed Drain Current¹

-16.7

-10.6

-7.5

9.3

7.4

-6

-30

P_D@T_A=25℃

T_STG

Total Power Dissipation

2.5

℃

Storage Temperature Range

Operating Junction Temperature Range

-55 to 150

T_J

Thermal Data

Symbol

Parameter

Value

Unit

℃/W

Rthj-c

Maximum Thermal Resistance, Junction-case

Maximum Thermal Resistance, Junction-ambient³

Rthj-a

201911221

12 3 4 5 6 7 8

中文翻译

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