AP3CA035EJY
Halogen-Free Product
Advanced Power
Electronics Corp.
N AND P-CHANNEL ENHANCEMENT
MODE POWER MOSFET
▼ Simple Drive Requirement
N-CH BVDSS
30V
35mΩ
4.9A
D2
D2
D1
D1
▼ Low Gate Charge
RDS(ON)
▼ Fast Switching Performance
▼ RoHS Compliant & Halogen-Free
G2
S2
G1
S1
ID
P-CH BVDSS
RDS(ON)
-30V
2928-8RU
80mΩ
-3.4A
Description
ID
AP3CA035 series are from Advanced Power innovated design
and silicon process technology to achieve the lowest possible
on-resistance and fast switching performance. It provides the
designer with an extreme efficient device for use in a wide
range of power applications.
D1
D2
G1
G2
The 2928-8RU J-lead package provides good on-resistance
performance and space saving like TSOP-6.
S1
S2
Absolute Maximum Ratings@Tj=25oC(unless otherwise specified)
.
Symbol
Parameter
Rating
Units
N-channel
P-channel
-30
VDS
VGS
Drain-Source Voltage
30
+20
4.9
3.9
20
V
V
Gate-Source Voltage
+20
Drain Current, VGS @ 10V3
Drain Current, VGS @ 10V3
Pulsed Drain Current1
ID@TA=25℃
ID@TA=70℃
IDM
-3.4
A
-2.7
A
-16
A
PD@TA=25℃
TSTG
Total Power Dissipation
1.38
W
℃
℃
Storage Temperature Range
Operating Junction Temperature Range
-55 to 150
-55 to 150
TJ
Thermal Data
Symbol
Parameter
Value
90
Unit
Rthj-a
Maximum Thermal Resistance, Junction-ambient3
℃/W
1
202009021