Datasheet > AP3CA010MT

AP3CA010MT

更新时间： 2024-11-21 17:15:55

品牌	Logo	应用领域
富鼎先进 - A-POWER		/
页数	文件大小	规格书
10页	265K
描述
PMPAK-5x6

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AP3CA010MT 数据手册

AP3CA010MT

Halogen-Free Product

Advanced Power

Electronics Corp.

N AND P-CHANNEL ENHANCEMENT

MODE POWER MOSFET

D1 D1 D2 D2

▼ Simple Drive Requirement

N-CH BV_DSS

R_DS(ON)

30V

9.6mΩ

15A

▼ Low Gate Charge

▼ Fast Switching Performance

▼ RoHS Compliant & Halogen-Free

I_D

P-CH BV_DSS

R_DS(ON)

-30V

19mΩ

-11A

S1 G1 S2 G2

Description

I_D

AP3CA010 series are from Advanced Power innovated design

and silicon process technology to achieve the lowest possible

on-resistance and fast switching performance. It provides the

designer with an extreme efficient device for use in a wide

range of power applications.

The PMPAK ^®5x6 package is special for voltage conversion

application using standard infrared reflow technique with the

backside heat sink to achieve the good thermal performance.

PMPAK^®5x6

Absolute Maximum Ratings@T_j=25^oC(unless otherwise specified)

Symbol

Parameter

Rating

Units

N-channel

P-channel

-30

V_DS

V_GS

Drain-Source Voltage

+20

Gate-Source Voltage

+20

Drain Current, V_GS@ 10V³

I_D@T_A=25℃

I_D@T_A=70℃

I_DM

-11

-9

Pulsed Drain Current¹

-30

P_D@T_A=25℃

T_STG

Total Power Dissipation

3.57

℃

Storage Temperature Range

Operating Junction Temperature Range

-55 to 150

T_J

Thermal Data

Symbol

Parameter

Units

Rating

N-channel

P-channel

Rthj-c

Rthj-a

Maximum Thermal Resistance, Junction-case

Maximum Thermal Resistance, Junction-ambient³

℃/W

202103091

12 3 4 5 6 7...10

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