5秒后页面跳转
AP3D5R0MT PDF预览

AP3D5R0MT

更新时间: 2024-11-21 17:15:47
品牌 Logo 应用领域
富鼎先进 - A-POWER /
页数 文件大小 规格书
8页 132K
描述
PMPAK-5x6

AP3D5R0MT 数据手册

 浏览型号AP3D5R0MT的Datasheet PDF文件第2页浏览型号AP3D5R0MT的Datasheet PDF文件第3页浏览型号AP3D5R0MT的Datasheet PDF文件第4页浏览型号AP3D5R0MT的Datasheet PDF文件第5页浏览型号AP3D5R0MT的Datasheet PDF文件第6页浏览型号AP3D5R0MT的Datasheet PDF文件第7页 
AP3D5R0MT  
Halogen-Free Product  
Advanced Power  
Electronics Corp.  
DUAL N-CHANNEL ENHANCEMENT  
MODE POWER MOSFET  
D1  
Simple Drive Requirement  
CH-1 BVDSS  
RDS(ON)  
30V  
Easy for Synchronous Buck  
11.5mΩ  
G1  
G2  
Converter Application  
CH-2 BVDSS  
RDS(ON)  
30V  
5mΩ  
D2/S1  
RoHS Compliant & Halogen-Free  
Description  
S2  
Advanced Power MOSFETs from APEC provide  
the designer with the best combination of fast  
switching, ruggedized device design, low on-  
resistance and cost-effectiveness.  
G2  
S2  
S2  
S2  
G2 S2 S2 S2  
S1/D2  
The control MOSFET (CH-1) and synchronous  
MOSFET (CH-2) co-package for synchronous buck  
converters.  
G1  
D1  
D1  
D1  
D1  
PMPAK® 5x6  
G1 D1 D1 D1  
.
Absolute Maximum Ratings@Tj=25oC(unless otherwise specified)  
Symbol  
Parameter  
Rating  
Units  
CH-1  
30  
CH-2  
30  
VDS  
VGS  
Drain-Source Voltage  
V
V
Gate-Source Voltage  
+20  
34  
+20  
74  
ID@TC=25  
ID@TA=25℃  
ID@TA=70℃  
IDM  
Drain Current, VGS @ 10V (Silicon Limited)  
Drain Current3 , VGS @ 10V  
Drain Current3 , VGS @ 10V  
Pulsed Drain Current1  
A
13.2  
10.5  
40  
22.7  
18.2  
60  
A
A
A
PD@TA=25℃  
TSTG  
Total Power Dissipation  
3.13  
3.9  
W
Storage Temperature Range  
Operating Junction Temperature Range  
-55 to 150  
-55 to 150  
TJ  
Thermal Data  
Rating  
Symbol  
Parameter  
Units  
CH-1  
6
CH-2  
3
Rthj-c  
Rthj-a  
Rthj-a  
Maximum Thermal Resistance, Junction-case  
Maximum Thermal Resistance, Junction-ambient3  
Maximum Thermal Resistance, Junction-ambient4  
/W  
/W  
/W  
40  
32  
70  
60  
1
201709191