Datasheet > AP25N10GH

AP25N10GH

更新时间： 2024-11-19 17:15:15

品牌	Logo	应用领域
富鼎先进 - A-POWER		/
页数	文件大小	规格书
5页	106K
描述
TO-252

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中文翻译

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数据手册

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AP25N10GH 数据手册

AP25N10GH/J-HF

Halogen-Free Product

Advanced Power

Electronics Corp.

N-CHANNEL ENHANCEMENT MODE

POWER MOSFET

▼ Low Gate Charge

BV_DSS

R_DS(ON)

I_D

100V

80mΩ

23A

▼ Single Drive Requirement

▼ RoHS Compliant & Halogen-Free

Description

AP25N10 series are from Advanced Power innovated design and silicon

process technology to achieve the lowest possible on-resistance and

fast switching performance. It provides the designer with an extreme

efficient device for use in a wide range of power applications.

The TO-252 package is widely preferred for all commercial-industrial

surface mount applications using infrared reflow technique and suited

for high current application due to the low connection resistance. The

through-hole version (AP25N10GJ) are available for low-profile

applications.

TO-252(H)

TO-251(J)

Absolute Maximum Ratings@T_j=25^oC(unless otherwise specified)

Symbol

Parameter

Rating

Units

V_DS

V_GS

Drain-Source Voltage

100

Gate-Source Voltage

+20

Drain Current, V_GS@ 10V

Pulsed Drain Current¹

I_D@T_C=25℃

I_D@T_C=100℃

I_DM

14.6

P_D@T_C=25℃

T_STG

Total Power Dissipation

℃

Storage Temperature Range

Operating Junction Temperature Range

-55 to 150

T_J

Thermal Data

Symbol

Parameter

Value

Units

℃/W

Rthj-c

Maximum Thermal Resistance, Junction-case

Maximum Thermal Resistance, Junction-ambient (PCB mount)³

Maximum Thermal Resistance, Junction-ambient

1.3

Rthj-a

62.5

110

Rthj-a

Data and specifications subject to change without notice

201410214

12 3 4 5

中文翻译

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与AP25N10GH相关器件

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AP25N10GH-HF	A-POWER	获取价格	N-CHANNEL ENHANCEMENT MODE POWER MOSFET
AP25N10GH-HF_14	A-POWER	获取价格	Single Drive Requirement
AP25N10GJ-HF	A-POWER	获取价格	N-CHANNEL ENHANCEMENT MODE POWER MOSFET
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