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AP25N10GP-HF_14 PDF预览

AP25N10GP-HF_14

更新时间: 2024-11-07 01:18:11
品牌 Logo 应用领域
富鼎先进 - A-POWER /
页数 文件大小 规格书
4页 106K
描述
Simple Drive Requirement

AP25N10GP-HF_14 数据手册

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AP25N10GS/P-HF  
Halogen-Free Product  
Advanced Power  
Electronics Corp.  
N-CHANNEL ENHANCEMENT MODE  
POWER MOSFET  
D
S
Low Gate Charge  
BVDSS  
RDS(ON)  
ID  
100V  
80mΩ  
23A  
Simple Drive Requirement  
Fast Switching Characteristic  
G
RoHS Compliant & Halogen-Free  
Description  
Advanced Power MOSFETs from APEC provide the  
designer with the best combination of fast switching,  
ruggedized device design, low on-resistance and cost-effectiveness.  
G
D
S
TO-220(P)  
The TO-263 package is widely preferred for all commercial-industrial  
surface mount applications and suited for low voltage applications  
such as DC/DC converters. The through-hole version (AP25N10GP)  
are available for low-profile applications.  
G
D
TO-263(S)  
S
Absolute Maximum Ratings  
Symbol  
Parameter  
Rating  
100  
Units  
V
VDS  
VGS  
Drain-Source Voltage  
Gate-Source Voltage  
+20  
V
ID@TC=25  
ID@TC=100℃  
IDM  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current1  
23  
A
14.6  
A
80  
A
PD@TC=25℃  
Total Power Dissipation  
96  
W
Linear Derating Factor  
0.77  
W/℃  
TSTG  
TJ  
Storage Temperature Range  
Operating Junction Temperature Range  
-55 to 150  
-55 to 150  
Thermal Data  
Symbol  
Parameter  
Value  
1.3  
Units  
/W  
/W  
/W  
Rthj-c  
Maximum Thermal Resistance, Junction-case  
Maximum Thermal Resistance, Junction-ambient (PCB mount)3  
Maximum Thermal Resistance, Junction-ambient  
Rthj-a  
40  
Rthj-a  
62  
Data & specifications subject to change without notice  
1
200906033  

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