Datasheet > AON6270

AON6270

更新时间： 2024-09-10 12:51:23

品牌	Logo	应用领域
飞思卡尔 - FREESCALE		/
页数	文件大小	规格书
6页	320K
描述
75V N-Channel MOSFET

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AON6270 数据手册

AON6270

75V N-Channel MOSFET

General Description

The AON6270 uses trench MOSFET technology that is

uniquely optimized to provide the most efficient hi

frequency switching performance. Both conduction and switching power losses are minimized due to an

extremely low combination of R_DS(ON)

, Ciss and Coss.

This device is ideal for boost converters and synchronous

rectifiers for consumer, telecom, industrial powersupplies

and LED backlighting.

Features

V_DS

75V

I_D(at V_GS=10V)

R_DS(ON)(at V_GS=10V)

R_DS(ON)(at V_GS=6V)

85A

< 3.9mΩ

< 5.0mΩ

Top View

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

V_DS

Maximum

Units

Drain-Source Voltage

Gate-Source Voltage

±20

V_GS

T_C=25°C

Continuous Drain

Current ^G

Pulsed Drain Current ^C

I_D

T_C=100°C

I_DM

200

31.5

T_A=25°C

T_A=70°C

Continuous Drain

Current

Avalanche Current ^C

Avalanche energy L=0.1mH ^C

I_DSM

I_AS

E_AS

200

T_C=25°C

Power Dissipation ^B

T_C=100°C

P_D

T_A=25°C

7.3

P_DSM

°C

Power Dissipation ^A

4.7

T_A=70°C

Junction and Storage Temperature Range

T_J, T_STG

-55 to 150

Thermal Characteristics

Parameter

Symbol

Typ

Max

Units

°C/W

Maximum Junction-to-Ambient ^A

Maximum Junction-to-Ambient ^{A D}

Maximum Junction-to-Case

≤ 10s

R_θJA

Steady-State

R_θJC

1.1

1.5

1/6

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