Datasheet > AON6403

AON6403

更新时间： 2024-09-10 12:51:35

品牌	Logo	应用领域
美国万代 - AOS		/
页数	文件大小	规格书
6页	237K
描述
30V P-Channel MOSFET

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技术参数
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AON6403 技术参数

生命周期：	Active	包装说明：	,
Reach Compliance Code：	compliant	风险等级：	5.53
Base Number Matches：	1

AON6403 数据手册

AON6403

30V P-Channel MOSFET

General Description

Product Summary

V_DS

-30V

The AON6403 combines advanced trench MOSFET

technology with a low resistance package to provide

extremely low R_DS(ON). This device is ideal for load switch

and battery protection applications.

I_D(at V_GS= -10V)

-85A

_DS(ON)(at V_GS= -10V)

< 3.1mΩ

< 4.3mΩ

R_DS(ON)(at V_GS= -4.5V)

100% UIS Tested

100% R_gTested

DFN5X6

Top View

Bottom View

PIN1

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

V_DS

Maximum

-30

Units

Drain-Source Voltage

Gate-Source Voltage

V_GS

±20

T_C=25°C

-85

Continuous Drain

Current ^G

I_D

T_C=100°C

-67

Pulsed Drain Current ^C

I_DM

-280

-21

T_A=25°C

T_A=70°C

Continuous Drain

Current

Avalanche Current ^C

Repetitive avalanche energy L=0.1mH ^C

I_DSM

-17

I_AR

-72

E_AR

259

T_C=25°C

Power Dissipation ^B

T_C=100°C

P_D

T_A=25°C

2.3

P_DSM

°C

Power Dissipation ^A

1.4

T_A=70°C

Junction and Storage Temperature Range

T_J, T_STG

-55 to 150

Thermal Characteristics

Parameter

Symbol

Typ

Max

Units

°C/W

Maximum Junction-to-Ambient ^A

t ≤ 10s

R_θJA

Maximum Junction-to-Ambient ^{A D}

Maximum Junction-to-Case

Steady-State

R_θJC

1.5

Rev 2: November 2010

www.aosmd.com

Page 1 of 6

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