Datasheet > AON6292

AON6292

更新时间： 2024-09-10 12:51:35

品牌	Logo	应用领域
美国万代 - AOS		/
页数	文件大小	规格书
6页	269K
描述
100V N-Channel MOSFET

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技术参数
数据手册

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AON6292 技术参数

是否Rohs认证：	符合	生命周期：	Active
包装说明：	,	Reach Compliance Code：	compliant
风险等级：	5.7	配置：	Single
最大漏极电流 (Abs) (ID)：	85 A	FET 技术：	METAL-OXIDE SEMICONDUCTOR
湿度敏感等级：	1	工作模式：	ENHANCEMENT MODE
最高工作温度：	150 °C	极性/信道类型：	N-CHANNEL
最大功率耗散 (Abs)：	156 W	子类别：	FET General Purpose Powers
表面贴装：	YES	Base Number Matches：	1

AON6292 数据手册

AON6292

100V N-Channel MOSFET

General Description

Product Summary

V_DS

100V

The AON6292 uses trench MOSFET technology that is

uniquely optimized to provide the most efficient high

frequency switching performance. Both conduction and

switching power losses are minimized due to an

extremely low combination of R_DS(ON), Ciss and Coss.

This device is ideal for boost converters and synchronous

rectifiers for consumer, telecom, industrial power supplies

and LED backlighting.

I_D(at V_GS=10V)

R_DS(ON)(at V_GS=10V)

R_DS(ON)(at V_GS=6V)

85A

< 6mΩ

< 8.5mΩ

100% UIS Tested

100% R_gTested

DFN5X6

Top View

Bottom View

PIN1

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

V_DS

Maximum

Units

Drain-Source Voltage

Gate-Source Voltage

100

±20

V_GS

T_C=25°C

Continuous Drain

Current ^G

I_D

T_C=100°C

Pulsed Drain Current ^C

I_DM

220

T_A=25°C

T_A=70°C

Continuous Drain

Current

Avalanche Current ^C

Avalanche energy L=0.1mH ^C

I_DSM

I_AS

E_AS

125

T_C=25°C

Power Dissipation ^B

T_C=100°C

156

P_D

62.5

7.3

T_A=25°C

P_DSM

°C

Power Dissipation ^A

4.7

T_A=70°C

Junction and Storage Temperature Range

T_J, T_STG

-55 to 150

Thermal Characteristics

Parameter

Symbol

Typ

Max

Units

°C/W

Maximum Junction-to-Ambient ^A

Maximum Junction-to-Ambient ^{A D}

Maximum Junction-to-Case

≤ 10s

R_θJA

Steady-State

R_θJC

0.55

0.8

Rev 0: Sep. 2012

www.aosmd.com

Page 1 of 6

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中文翻译

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