Datasheet > AON6400L

AON6400L

更新时间： 2024-09-09 21:11:43

品牌	Logo	应用领域
美国万代 - AOS		/
页数	文件大小	规格书
6页	232K
描述
Transistor

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技术参数
数据手册

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AON6400L 技术参数

生命周期：	Obsolete	包装说明：	,
Reach Compliance Code：	compliant	风险等级：	5.81
Base Number Matches：	1

AON6400L 数据手册

AON6400L

30V N-Channel MOSFET

General Description

Product Summary

V_DS

The AON6400L combines advanced trench MOSFET

technology with a low resistance package to provide

extremely low R_DS(ON). This device is ideal for load switch

and battery protection applications.

30V

85A

I_D(at V_GS=10V)

< 1.4mΩ

< 1.8mΩ

R_DS(ON)(at V_GS=10V)

R_DS(ON)(at V_GS= 4.5V)

100% UIS Tested

100% R_gTested

DFN5X6

Top View

Bottom View

PIN1

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

Maximum

Units

V_DS

Drain-Source Voltage

V_GS

I_D

I_DM

I_DSM

Gate-Source Voltage

Continuous Drain

Current ^G

±20

T_C=25°C

T_C=100°C

Pulsed Drain Current ^C

400

T_A=25°C

T_A=70°C

Continuous Drain

Current

Avalanche Current ^C

Avalanche energy L=0.1mH ^C

I_AS, I_AR

E_AS, E_AR

405

T_C=25°C

P_D

Power Dissipation ^B

Power Dissipation ^A

T_C=100°C

T_A=25°C

T_A=70°C

2.3

P_DSM

1.45

-55 to 150

T_J, T_STG

Junction and Storage Temperature Range

°C

Thermal Characteristics

Parameter

Symbol

Typ

Max

Units

°C/W

Maximum Junction-to-Ambient ^A

t ≤ 10s

R_θJA

Maximum Junction-to-Ambient ^{A D}

Maximum Junction-to-Case

Steady-State

R_θJC

1.5

Rev 0 : July 2009

www.aosmd.com

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