AON5802

更新时间： 2024-10-13 21:53:55

品牌	Logo	应用领域
美国万代 - AOS		晶体晶体管场效应晶体管
页数	文件大小	规格书
4页	199K
描述
Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor

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AON5802 数据手册

AON5802

Common-Drain Dual N-Channel Enhancement Mode Field Effect

Transistor

General Description

The AON5800 uses advanced trench technology to provide

Features

V_DS(V) = 30V

excellent R_DS(ON), low gate charge and operation with gate

I_D= 8 A (VGS = 10V)

voltages as low as 2.5V while retaining a 12V V_GS(MAX)rating. It is

_DS(ON)< 17 mΩ (V_GS= 10V)

_DS(ON)< 20 mΩ (V_GS= 4.5V)

ESD protected. This device is suitable for use as a uni-directional

or bi-directional load switch, facilitated by its common-drain

configuration. Standard Product AON5802 is Pb-free (meets

ROHS & Sony 259 specifications). AON5802L is a Green Product

ordering option. AON5802 and AON5802L are electrically

identical.

R_DS(ON)< 22 mΩ (V_GS= 4.0V)

R_DS(ON)< 24 mΩ (V_GS= 3.1V)

_DS(ON)< 30 mΩ (V_GS= 2.5V)

ESD Rating: 2000V HBM

Top View

Bottom View

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

Maximum

Units

V_DS

Drain-Source Voltage

Gate-Source Voltage

V_GS

±12

T_A=25°C

Continuous Drain

I_D

Current^.R_θJA=75°C/W T_A=70°C

Pulsed Drain Current ^C

I_DM

Power Dissipation ^A

T_A=25°C

1.7

P_DSM

T_J, T_STG

R_θJA=75°C/W

T_A=70°C

1.0

Junction and Storage Temperature Range

-55 to 150

°C

Thermal Characteristics

Parameter

Symbol

Typ

Max

Units

°C/W

Maximum Junction-to-Ambient ^A

t ≤ 10s

R_θJA

Maximum Junction-to-Ambient ^A

Maximum Junction-to-Lead ^B

4.5

Steady-State

R_θJC

Alpha & Omega Semiconductor, Ltd.

12 3 4

中文翻译

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