Datasheet > AON5810

AON5810

更新时间： 2024-10-14 12:51:35

品牌	Logo	应用领域
美国万代 - AOS		晶体晶体管场效应晶体管
页数	文件大小	规格书
4页	404K
描述
Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor

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AON5810 数据手册

AON5810

Common-Drain Dual N-Channel Enhancement Mode Field Effect

Transistor

General Description

Features

V_DS(V) = 20V

I_D= 7.7 A (V_GS= 4.5V)

The AON5810 uses advanced trench technology to

provide excellent R_DS(ON), low gate charge and

operation with gate voltages as low as 1.8V while

retaining a 12V V_GS(MAX)rating. It is ESD protected. This

device is suitable for use as a uni-directional or bi-

directional load switch, facilitated by its common-drain

configuration. Standard Product AON5810 is Pb-free

(meets ROHS & Sony 259 specifications). AON5810L

is a Green Product ordering option. AON5810 and

AON5810L are electrically identical.

_DS(ON)< 18 mΩ (V_GS= 4.5V)

R_DS(ON)< 19 mꢀ (V_GS= 4.0V)

R_DS(ON)< 21 mꢀ (V_GS= 3.1V)

_DS(ON)< 25 mΩ (V_GS= 2.5V)

R_DS(ON)< 40 mΩ (V_GS= 1.8V)

ESD Rating: 2000V HBM

DFN 2X5

D1/D2

Top View

Bottom View

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

Maximum

Units

Drain-Source Voltage

V_DS

Gate-Source Voltage

V_GS

±12

7.7

6.1

T_A=25°C

T_A=70°C

Continuous Drain

Current R_θJA=75°C/W

Pulsed Drain Current ^B

I_D

I_DM

Power Dissipation ^A

T_A=25°C

T_A=70°C

1.6

P_DSM

T_J, T_STG

°C

_θJA=75°C/W

1.0

-55 to 150

Junction and Storage Temperature Range

Thermal Characteristics

Parameter

Symbol

Typ

Max

Units

°C/W

Maximum Junction-to-Ambient ^A

t ≤ 10s

R_θJA

Maximum Junction-to-Ambient ^A

Maximum Junction-to-Case ^B

Steady-State

R_θJC

4.5

Alpha & Omega Semiconductor, Ltd.

12 3 4

中文翻译

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