AON6242
60V N-Channel MOSFET
General Description
The AON6242 uses trench MOSFET technology that is
uniquely optimized to provide the most efficient hi
minimized due to an extremely low combination of
gh
frequency switching performance.Power losses are
RDS(ON)
and Crss.In addition,switching behavior is well
controlled with a soft recovery body diode.This dev
ice is
ideal for boost converters and synchronous rectifie
backlighting.
D
rs for consumer, telecom, industrial power supplies and LE
Product Summary
VDS
60V
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
RDS(ON) (at VGS = 4.5V)
85A
< 3.6mΩ
< 4.5mΩ
100% UIS Tested
100% Rg Tested
D
Top View
1
8
7
6
5
2
3
G
4
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
VDS
Maximum
Units
Drain-Source Voltage
Gate-Source Voltage
60
±20
85
V
V
VGS
TC=25°C
Continuous Drain
Current G
ID
TC=100°C
66
A
Pulsed Drain Current C
IDM
240
18.5
14.5
75
TA=25°C
TA=70°C
Continuous Drain
Current
Avalanche Current C
Repetitive avalanche energy L=0.1mH C
IDSM
A
IAR
A
EAR
281
mJ
TC=25°C
Power Dissipation B
TC=100°C
83
PD
W
33
TA=25°C
2.3
PDSM
W
°C
Power Dissipation A
1.4
TA=70°C
Junction and Storage Temperature Range
TJ, TSTG
-55 to 150
Thermal Characteristics
Parameter
Symbol
Typ
14
40
1
Max
17
Units
°C/W
°C/W
°C/W
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
t
≤ 10s
RθJA
Steady-State
Steady-State
55
RθJC
1.5
1/6
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