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AON6242 PDF预览

AON6242

更新时间: 2024-10-14 12:51:15
品牌 Logo 应用领域
飞思卡尔 - FREESCALE /
页数 文件大小 规格书
6页 332K
描述
60V N-Channel MOSFET

AON6242 数据手册

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AON6242  
60V N-Channel MOSFET  
General Description  
The AON6242 uses trench MOSFET technology that is  
uniquely optimized to provide the most efficient hi  
minimized due to an extremely low combination of  
gh  
frequency switching performance.Power losses are  
RDS(ON)  
and Crss.In addition,switching behavior is well  
controlled with a soft recovery body diode.This dev  
ice is  
ideal for boost converters and synchronous rectifie  
backlighting.  
D
rs for consumer, telecom, industrial power supplies and LE  
Product Summary  
VDS  
60V  
ID (at VGS=10V)  
RDS(ON) (at VGS=10V)  
RDS(ON) (at VGS = 4.5V)  
85A  
< 3.6m  
< 4.5mΩ  
100% UIS Tested  
100% Rg Tested  
D
Top View  
1
8
7
6
5
2
3
G
4
S
Absolute Maximum Ratings TA=25°C unless otherwise noted  
Parameter  
Symbol  
VDS  
Maximum  
Units  
Drain-Source Voltage  
Gate-Source Voltage  
60  
±20  
85  
V
V
VGS  
TC=25°C  
Continuous Drain  
Current G  
ID  
TC=100°C  
66  
A
Pulsed Drain Current C  
IDM  
240  
18.5  
14.5  
75  
TA=25°C  
TA=70°C  
Continuous Drain  
Current  
Avalanche Current C  
Repetitive avalanche energy L=0.1mH C  
IDSM  
A
IAR  
A
EAR  
281  
mJ  
TC=25°C  
Power Dissipation B  
TC=100°C  
83  
PD  
W
33  
TA=25°C  
2.3  
PDSM  
W
°C  
Power Dissipation A  
1.4  
TA=70°C  
Junction and Storage Temperature Range  
TJ, TSTG  
-55 to 150  
Thermal Characteristics  
Parameter  
Symbol  
Typ  
14  
40  
1
Max  
17  
Units  
°C/W  
°C/W  
°C/W  
Maximum Junction-to-Ambient A  
Maximum Junction-to-Ambient A D  
Maximum Junction-to-Case  
t
10s  
RθJA  
Steady-State  
Steady-State  
55  
RθJC  
1.5  
1/6  
www.freescale.net.cn  

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