Datasheet > AON6246

AON6246

更新时间： 2024-09-10 12:51:35

品牌	Logo	应用领域
美国万代 - AOS		/
页数	文件大小	规格书
6页	292K
描述
60V N-Channel MOSFET

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AON6246 数据手册

AON6246

60V N-Channel MOSFET

General Description

Product Summary

V_DS

60V

The AON6246 uses trench MOSFET technology that is

uniquely optimized to provide the most efficient high

frequency switching performance.Power losses are

minimized due to an extremely low combination of R_DS(ON)

and C_rss.In addition,switching behavior is well controlled

with a soft recovery body diode.This device is ideal for

boost converters and synchronous rectifiers for

consumer, telecom, industrial power supplies and LED

backlighting.

I_D(at V_GS=10V)

R_DS(ON)(at V_GS=10V)

R_DS(ON)(at V_GS= 4.5V)

80A

< 6.4mΩ

< 8mΩ

100% UIS Tested

100% R_gTested

DFN5X6

Top View

Bottom View

PIN1

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

V_DS

Maximum

Units

Drain-Source Voltage

Gate-Source Voltage

±20

V_GS

T_C=25°C

Continuous Drain

Current

Pulsed Drain Current ^C

I_D

T_C=100°C

I_DM

170

T_A=25°C

T_A=70°C

Continuous Drain

Current

Avalanche Current ^C

Avalanche energy L=0.1mH ^C

I_DSM

I_AS, I_AR

E_AS, E_AR

125

T_C=25°C

P_D

Power Dissipation ^B

T_C=100°C

T_A=25°C

2.3

P_DSM

°C

Power Dissipation ^A

1.4

T_A=70°C

Junction and Storage Temperature Range

T_J, T_STG

-55 to 150

Thermal Characteristics

Parameter

Symbol

Typ

Max

Units

°C/W

Maximum Junction-to-Ambient ^A

Maximum Junction-to-Ambient ^{A D}

Maximum Junction-to-Case

≤ 10s

R_θJA

Steady-State

R_θJC

1.1

1.5

Rev 0: July 2011

www.aosmd.com

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