AON6244
60V N-Channel MOSFET
General Description
Product Summary
VDS
60V
The AO6244 uses trench MOSFET technology that is
uniquely optimized to provide the most efficient high
frequency switching performance.Power losses are
minimized due to an extremely low combination of
RDS(ON) and Crss.In addition,switching behavior is well
controlled with a soft recovery body diode.This device is
ideal for boost converters and synchronous rectifiers for
consumer, telecom, industrial power supplies and LED
backlighting.
ID (at VGS =10V)
RDS(ON) (at VGS =10V)
RDS(ON) (at VGS =4.5V)
85A
< 4.7mΩ
< 6.2mΩ
100% UIS Tested
100% Rg Tested
D
DFN5X6
Top View
Top View
Bottom View
1
8
7
6
5
2
3
4
G
S
PIN1
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
VDS
Maximum
Units
Drain-Source Voltage
Gate-Source Voltage
60
±20
85
V
V
VGS
TC=25°C
Continuous Drain
Current G
Pulsed Drain Current C
ID
TC=100°C
A
59
IDM
200
15
TA=25°C
TA=70°C
Continuous Drain
Current
Avalanche Current C
Avalanche energy L=0.1mH C
IDSM
A
12
IAS, IAR
65
A
EAS, EAR
211
83
mJ
TC=25°C
PD
W
Power Dissipation B
TC=100°C
33
TA=25°C
2.3
PDSM
W
°C
Power Dissipation A
1.5
TA=70°C
Junction and Storage Temperature Range
TJ, TSTG
-55 to 150
Thermal Characteristics
Parameter
Symbol
Typ
14
40
1
Max
17
Units
°C/W
°C/W
°C/W
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
t
≤ 10s
RθJA
Steady-State
Steady-State
55
RθJC
1.5
Rev 0: July 2011
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