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AON6248 PDF预览

AON6248

更新时间: 2024-09-10 12:51:35
品牌 Logo 应用领域
美国万代 - AOS /
页数 文件大小 规格书
6页 270K
描述
60V N-Channel MOSFET

AON6248 数据手册

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AON6248  
60V N-Channel MOSFET  
General Description  
Product Summary  
VDS  
60V  
The AON6248 uses trench MOSFET technology that is  
uniquely optimized to provide the most efficient high  
frequency switching performance. Both conduction and  
switching power losses are minimized due to an  
extremely low combination of RDS(ON), Ciss and Coss.  
This device is ideal for boost converters and synchronous  
rectifiers for consumer, telecom, industrial power supplies  
and LED backlighting.  
ID (at VGS=10V)  
RDS(ON) (at VGS=10V)  
RDS(ON) (at VGS=4.5V)  
53A  
< 11.5m  
< 14.7mΩ  
100% UIS Tested  
100% Rg Tested  
D
DFN5X6  
Top View  
Top View  
Bottom View  
1
8
7
6
5
2
3
4
G
S
PIN1  
Absolute Maximum Ratings TA=25°C unless otherwise noted  
Parameter  
Symbol  
VDS  
Maximum  
Units  
Drain-Source Voltage  
Gate-Source Voltage  
60  
±20  
53  
V
V
VGS  
TC=25°C  
Continuous Drain  
Current  
ID  
TC=100°C  
34  
A
Pulsed Drain Current C  
IDM  
110  
17.5  
14  
TA=25°C  
TA=70°C  
Continuous Drain  
Current  
Avalanche Current C  
Avalanche energy L=0.1mH C  
IDSM  
A
IAS  
30  
A
EAS  
45  
mJ  
TC=25°C  
Power Dissipation B  
TC=100°C  
69.5  
27.5  
7.4  
PD  
W
TA=25°C  
PDSM  
W
°C  
Power Dissipation A  
4.7  
TA=70°C  
Junction and Storage Temperature Range  
TJ, TSTG  
-55 to 150  
Thermal Characteristics  
Parameter  
Symbol  
Typ  
14  
Max  
17  
Units  
°C/W  
°C/W  
°C/W  
Maximum Junction-to-Ambient A  
Maximum Junction-to-Ambient A D  
Maximum Junction-to-Case  
t
10s  
RθJA  
Steady-State  
Steady-State  
40  
55  
RθJC  
1.3  
1.8  
Rev 0 : Oct. 2012  
www.aosmd.com  
Page 1 of 6  

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