Datasheet > AON6200L

AON6200L

更新时间： 2024-10-14 12:51:15

品牌	Logo	应用领域
飞思卡尔 - FREESCALE		/
页数	文件大小	规格书
6页	712K
描述
30V N-Channel MOSFET

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AON6200L 数据手册

AON6200L

30V N-Channel MOSFET

General Description

The AON6200L uses trench MOSFET technology that is uniquely optimized to provide the most efficient high

switching losses are minimized due to an extremely low

frequency switching performance. Conduction and

combination of R_DS(ON)

and Crss.

Features

V_DS

30V

24A

I_D(at V_GS=10V)

< 7.8mΩ

< 11mΩ

_DS(ON)(at V_GS=10V)

R_DS(ON)(at V_GS= 4.5V)

100% UIS Tested

100% R_gTested

Top View

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

V_DS

Maximum

Units

Drain-Source Voltage

V_GS

I_D

I_DM

I_DSM

Gate-Source Voltage

Continuous Drain

Current ^G

±20

T_C=25°C

T_C=100°C

Pulsed Drain Current ^C

130

T_A=25°C

T_A=70°C

Continuous Drain

Current

Avalanche Current ^C

Repetitive avalanche energy L=0.1mH ^C

I_AR

E_AR

T_C=25°C

Power Dissipation ^B

T_C=100°C

P_D

T_A=25°C

1.95

1.25

-55 to 150

P_DSM

Power Dissipation ^A

T_A=70°C

T_J, T_STG

Junction and Storage Temperature Range

°C

Thermal Characteristics

Parameter

Symbol

Typ

Max

Units

°C/W

Maximum Junction-to-Ambient ^A

t ≤ 10s

R_θJA

Maximum Junction-to-Ambient ^{A D}

Maximum Junction-to-Case

Steady-State

R_θJC

2.6

3.5

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