Datasheet > AON6210

AON6210

更新时间： 2024-10-14 12:51:35

品牌	Logo	应用领域
美国万代 - AOS		/
页数	文件大小	规格书
6页	241K
描述
30V N-Channel MOSFET

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AON6210 数据手册

AON6210

30V N-Channel MOSFET

General Description

Product Summary

V_DS

The AON6210 uses trench MOSFET technology that is

uniquely optimized to provide the most efficient high

frequency switching performance. Conduction and

switching losses are minimized due to an extremely low

combination of R_DS(ON)and Crss.In addition,switching

behavior is well controlled with a "Schottky style" soft

recovery body diode.

30V

I_D(at V_GS=10V)

85A

< 1.8mΩ

R_DS(ON)(at V_GS=10V)

< 2.5mΩ

R_DS(ON)(at V_GS= 4.5V)

100% UIS Tested

100% R_gTested

DFN5X6

Top View

Bottom View

PIN1

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

Maximum

Units

V_DS

Drain-Source Voltage

V_GS

I_D

I_DM

I_DSM

Gate-Source Voltage

Continuous Drain

Current ^G

±20

T_C=25°C

T_C=100°C

Pulsed Drain Current ^C

350

T_A=25°C

T_A=70°C

Continuous Drain

Current

Avalanche Current ^C

Avalanche energy L=0.1mH ^C

I_AS, I_AR

E_AS, E_AR

361

T_C=25°C

P_D

Power Dissipation ^B

Power Dissipation ^A

T_C=100°C

T_A=25°C

T_A=70°C

2.3

P_DSM

1.5

T_J, T_STG

Junction and Storage Temperature Range

-55 to 150

°C

Thermal Characteristics

Parameter

Symbol

Typ

Max

Units

°C/W

Maximum Junction-to-Ambient ^A

t ≤ 10s

R_θJA

Maximum Junction-to-Ambient ^{A D}

Maximum Junction-to-Case

Steady-State

R_θJC

1.5

Rev0 : Jan 2010

www.aosmd.com

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