Datasheet > AON6202

AON6202

更新时间： 2024-10-14 12:51:27

品牌	Logo	应用领域
飞思卡尔 - FREESCALE		/
页数	文件大小	规格书
6页	390K
描述
30V N-Channel MOSFET

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AON6202 数据手册

AON6202

30V N-Channel MOSFET

General Description

The AON6202 uses trench MOSFET technology that is uniquely optimized to provide the most efficient high

frequency switching performance.Power losses are

minimized due to an extremely low combination of

R_DS(ON)

and Crss.In addition,switching behavior is well controlled with a "Schottky style" soft recovery body diode.

Features

V_DS

30V

I_D(at V_GS=10V)

R_DS(ON)(at V_GS=10V)

24A

< 5.5mΩ

< 7.5mΩ

R_DS(ON)(at V_GS= 4.5V)

Top View

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

V_DS

Maximum

Units

Drain-Source Voltage

Gate-Source Voltage

±20

V_GS

T_C=25°C

Continuous Drain

Current ^G

Pulsed Drain Current ^C

I_D

T_C=100°C

I_DM

150

T_A=25°C

T_A=70°C

Continuous Drain

Current

Avalanche Current ^C

Avalanche energy L=0.1mH ^C

I_DSM

I_AS, I_AR

E_AS, E_AR

T_C=25°C

Power Dissipation ^B

T_C=100°C

P_D

T_A=25°C

4.2

P_DSM

°C

Power Dissipation ^A

2.7

T_A=70°C

Junction and Storage Temperature Range

T_J, T_STG

-55 to 150

Thermal Characteristics

Parameter

Symbol

Typ

Max

Units

°C/W

Maximum Junction-to-Ambient ^A

Maximum Junction-to-Ambient ^{A D}

Maximum Junction-to-Case

≤ 10s

R_θJA

Steady-State

R_θJC

2.6

3.5

1/6

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