Datasheet > AON6242

AON6242

更新时间： 2024-02-11 00:48:17

品牌	Logo	应用领域
美国万代 - AOS		/
页数	文件大小	规格书
6页	292K
描述
60V N-Channel MOSFET

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AON6242 数据手册

AON6242

60V N-Channel MOSFET

General Description

Product Summary

V_DS

60V

The AON6242 uses trench MOSFET technology that is

uniquely optimized to provide the most efficient high

frequency switching performance.Power losses are

minimized due to an extremely low combination of

R_DS(ON)and Crss.In addition,switching behavior is well

controlled with a soft recovery body diode.This device is

ideal for boost converters and synchronous rectifiers for

consumer, telecom, industrial power supplies and LED

backlighting.

I_D(at V_GS=10V)

R_DS(ON)(at V_GS=10V)

R_DS(ON)(at V_GS= 4.5V)

85A

< 3.6mΩ

< 4.5mΩ

100% UIS Tested

100% R_gTested

DFN5X6

Top View

Bottom View

Top View

PIN1

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

V_DS

Maximum

Units

Drain-Source Voltage

Gate-Source Voltage

±20

V_GS

T_C=25°C

Continuous Drain

Current ^G

Pulsed Drain Current ^C

I_D

T_C=100°C

I_DM

240

18.5

14.5

T_A=25°C

T_A=70°C

Continuous Drain

Current

Avalanche Current ^C

Repetitive avalanche energy L=0.1mH ^C

I_DSM

I_AR

E_AR

281

T_C=25°C

Power Dissipation ^B

T_C=100°C

P_D

T_A=25°C

2.3

P_DSM

°C

Power Dissipation ^A

1.4

T_A=70°C

Junction and Storage Temperature Range

T_J, T_STG

-55 to 150

Thermal Characteristics

Parameter

Symbol

Typ

Max

Units

°C/W

Maximum Junction-to-Ambient ^A

Maximum Junction-to-Ambient ^{A D}

Maximum Junction-to-Case

≤ 10s

R_θJA

Steady-State

R_θJC

1.5

Rev 0: July 2011

www.aosmd.com

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AON6242 替代型号

型号	品牌	替代类型	描述	数据表
IPD90N06S4-04	INFINEON	功能相似	OptiMOS-T2 Power-Transistor

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