Datasheet > AON6200

AON6200

更新时间： 2024-10-14 12:51:35

品牌	Logo	应用领域
美国万代 - AOS		/
页数	文件大小	规格书
6页	317K
描述
30V N-Channel MOSFET

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AON6200 数据手册

AON6200

30V N-Channel MOSFET

General Description

Product Summary

V_DS

30V

The AON6200 uses trench MOSFET technology that is

uniquely optimized to provide the most efficient high

frequency switching performance. Conduction and

switching losses are minimized due to an extremely low

combination of R_DS(ON)and Crss.

I_D(at V_GS=10V)

R_DS(ON)(at V_GS=10V)

R_DS(ON)(at V_GS= 4.5V)

24A

< 7.8mΩ

< 11mΩ

100% UIS Tested

100% R_gTested

Top View

DFN5X6

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

V_DS

Maximum

Units

Drain-Source Voltage

Gate-Source Voltage

±20

V_GS

T_C=25°C

Continuous Drain

Current ^G

I_D

T_C=100°C

Pulsed Drain Current ^C

I_DM

130

T_A=25°C

T_A=70°C

Continuous Drain

Current

Avalanche Current ^C

Repetitive avalanche energy L=0.1mH ^C

I_DSM

I_AR

E_AR

T_C=25°C

Power Dissipation ^B

T_C=100°C

P_D

T_A=25°C

1.95

1.25

-55 to 150

P_DSM

°C

Power Dissipation ^A

T_A=70°C

Junction and Storage Temperature Range

T_J, T_STG

Thermal Characteristics

Parameter

Symbol

Typ

Max

Units

°C/W

Maximum Junction-to-Ambient ^A

Maximum Junction-to-Ambient ^{A D}

Maximum Junction-to-Case

≤ 10s

R_θJA

Steady-State

R_θJC

2.6

3.5

Rev 2: Feb 2011

www.aosmd.com

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