Datasheet > AO6801E

AO6801E

更新时间： 2024-11-25 12:23:51

品牌	Logo	应用领域
飞思卡尔 - FREESCALE		/
页数	文件大小	规格书
5页	260K
描述
30V Dual P-Channel MOSFET

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AO6801E 数据手册

AO6801E

30V Dual P-Channel MOSFET

General Description

The AO6801E combines advanced trench MOSFET

technology with a low resistance package to provide

extremely low R_DS(ON)

. This device is ideal for load switch

and battery protection applications.

Features

V_DS

-30V

I_D(at V_GS=-10V)

-2A

_DS(ON)(at V_GS=-10V)

< 110mΩ

< 135mΩ

< 185mΩ

R_DS(ON)(at V_GS=-4.5V)

R_DS(ON)(at V_GS=-2.5V)

Typical ESD protection

HBM Class 1C

Top View

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

V_DS

Maximum

Units

Drain-Source Voltage

Gate-Source Voltage

-30

±12

V_GS

T_A=25°C

T_A=70°C

-2.0

Continuous Drain

Current

I_D

-1.6

Pulsed Drain Current ^C

I_DM

P_D

-15

T_A=25°C

T_A=70°C

0.70

°C

Power Dissipation ^B

0.45

Junction and Storage Temperature Range

T_J, T_STG

-55 to 150

Thermal Characteristics

Parameter

Symbol

Typ

150

185

150

Max

180

230

180

Units

°C/W

Maximum Junction-to-Ambient ^A

Maximum Junction-to-Ambient ^{A D}

Maximum Junction-to-Lead

≤ 10s

R_θJA

Steady-State

R_θJL

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