Datasheet > AO6802

AO6802

更新时间： 2024-11-18 17:15:35

品牌	Logo	应用领域
友台半导体 - UMW		/
页数	文件大小	规格书
7页	497K
描述
种类:N+N-Channel;漏源电压（Vdss）:30V;持续漏极电流（Id）（在25°C时）:3.5A;Vgs(th)(V):±20;漏源导通电阻:50mΩ@10V

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AO6802 数据手册

UMW

AO6802

Channel MOSFET

Dual N

General Description

The AO6802 uses advanced trench technology to

provide excellent R_DS(ON)and low gate charge. This

device is suitable for use as a load switch or in PWM

applications.

Product Summary

VDS (V)= 30V

RDS(ON)

50m (VGS = 10V)

70 m (VGS = 4.5V)

RDS(ON)

SOT23-6

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

V_DS

Maximum

Units

Drain-Source Voltage

Gate-Source Voltage

±20

V_GS

T_A=25°C

T_A=70°C

3.5

Continuous Drain

Current

I_D

Pulsed Drain Current ^C

I_DM

P_D

T_A=25°C

T_A=70°C

1.15

0.73

-55 to 150

°C

Power Dissipation ^B

Junction and Storage Temperature Range

T_J, T_STG

Thermal Characteristics

Parameter

Symbol

Typ

Max

Units

°C/W

Maximum Junction-to-Ambient ^A

Maximum Junction-to-Ambient ^{A D}

Maximum Junction-to-Lead

≤ 10s

110

150

R_θJA

Steady-State

106

R_θJL

www.umw-ic.com

UTD Semiconductor Co.,Limited

12 3 4 5 6 7

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