Datasheet > AO6801E (KO6801E)

AO6801E (KO6801E)

更新时间： 2024-11-26 18:09:43

品牌	Logo	应用领域
科信 - KEXIN		/
页数	文件大小	规格书
4页	1880K
描述
Dual P-Channel MOSFET

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数据手册

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AO6801E (KO6801E) 数据手册

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SMD Type

MOSFET

Dual P-Channel MOSFET

AO6801E (KO6801E)

(

)

Unit: mm

SOT-23-6

+0.1

-0.1

0.4

■ Features

● VDS (V) =-30V

● ID =-2A (VGS =-10V)

● R^DS(ON)＜ 110mΩ (VGS =-10V)

● R^DS(ON)＜ 135mΩ (VGS =-4.5V)

● R^DS(ON)＜ 185mΩ (VGS =-2.5V)

+0.02

-0.02

0.15

+0.01

-0.01

● ESD Rating: 2000V HBM

+0.2

-0.1

4 Drain2

5 Source1

6 Drain1

1 Gate1

2 Source2

3 Gate2

■ Absolute Maximum Ratings Ta = 25℃

Parameter

Drain-Source Voltage

Symbol

Rating

-30

Unit

Gate-Source Voltage

±12

-2

=25°C

=70°C

Continuous Drain Current

Pulsed Drain Current

Power Dissipation

-1.6

-15

=25°C

=70°C

0.7

0.45

180

230

180

150

t ≤ 10s

Thermal Resistance.Junction- to-Ambient

thJA

thJL

Steady-State

℃/W

℃

Thermal Resistance.Junction- to-Lead

Junction Temperature

Junction Storage Temperature Range

stg

-55 to 150

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